B25DS60D datasheet, PDF - EEWORLD Datasheet

B25DS60D: DescriptionSilicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element; CategoryAnalog mixed-signal IC Trigger device; File Size43KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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B25DS60D Overview

Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, R-PUFM-X5
Reach Compliance Code	compliant
Is Samacsys	N
Shell connection	ISOLATED
Nominal circuit commutation break time	110 µs
Configuration	SERIES CONNECTED, 2 ELEMENTS
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	60 mA
Maximum DC gate trigger voltage	2 V
Quick connection description	2G
Description of screw terminals	A-K-AK
Maximum holding current	100 mA
JESD-30 code	R-PUFM-X5
JESD-609 code	e0
Maximum leakage current	10 mA
On-state non-repetitive peak current	410 A
Number of components	2
Number of terminals	5
Maximum on-state current	25000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	39.25 A
Maximum repetitive peak off-state leakage current	10000 µA
Off-state repetitive peak voltage	600 V
Repeated peak reverse voltage	600 V
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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