KTA1225D-Y datasheet, PDF - EEWORLD Datasheet

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KTA1225D-Y: DescriptionSmall Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size399KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTA1225D-Y Overview

Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3

KTA1225D-Y Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	160 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	10 W
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

HIGH VOLTAGE APPLICATION.

FEATURES

High Transition Frequency : f

T

=100MHz(Typ.).

Complementary to KTC2983D/L

A

C

KTA1225D/L

EPITAXIAL PLANAR PNP TRANSISTOR

I

J

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power

Dissipation

Junction Temperature

Storage Temperature Range

Ta=25

Tc=25

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

T

j

T

stg

RATING

-160

-5

-1.5

-0.3

1.0

10

150

-55 150

UNIT

V

A

W

A

C

H

F

1

2

F

3

P

L

DIM

A

B

C

D

E

F

H

I

J

K

L

M

O

P

Q

MILLIMETERS

_

6.60 + 0.2

_

6.10 + 0.2

_

5.0 + 0.2

_

1.10 + 0.2

_

2.70 + 0.2

_

2.30 + 0.1

1.00 MAX

_

2.30 + 0.2

_

0.5 + 0.1

_

2.00 + 0.20

_

0.50 + 0.10

_

0.91+ 0.10

_

0.90 + 0.1

_

1.00 + 0.10

0.95 MAX

B

K

E

M

Q

D

1. BASE

2. COLLECTOR

3. EMITTER

DPAK

I

J

D

O

H

G

P

F

L

1

2

3

DIM

A

B

C

D

E

F

G

H

I

J

K

L

P

Q

MILLIMETERS

_

6.60

+

0.2

_

6.10

+

0.2

_

5.0

+

0.2

_

1.10

+

0.2

_

9.50

+

0.6

_

2.30

+

0.1

_

0.76

+

0.1

1.0 MAX

_

2.30

+

0.2

_

0.5

+

0.1

_

2.0

+

0.2

_

0.50

+

0.1

_

1.0

+

0.1

0.90 MAX

Q

K

1. BASE

2. COLLECTOR

3. EMITTER

E

B

IPAK

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Note : h

FE

Classification O:70~140, Y:120~240

SYMBOL

I

CBO

I

EBO

V

(BR)CEO

V

(BR)EBO

h

FE

(Note)

V

CE(sat)

V

BE

f

T

C

ob

TEST CONDITION

V

CB

=-160V, I

E

=0

V

EB

=-5V, I

C

=0

I

C

=-10mA, I

B

=0

I

E

=-1mA, I

C

=0

V

CE

=-5V, I

C

=-100mA

I

C

=-500mA, I

B

=-50mA

V

CE

=-5V, I

C

=-500mA

V

CE

=-10V, I

C

=-100mA

V

CB

=-10V, I

E

=0, f=1MHz

MIN.

-

-160

-5.0

70

-

TYP.

-

100

30

MAX.

-1.0

-

240

-1.5

-1.0

-

V

MHz

pF

UNIT

A

V

2003. 3. 27

Revision No : 2

1/3

KTA1225D-Y Related Products

	KTA1225D-Y	KTA1225L-O	KTA1225D-O	KTA1225L-Y
Description	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1.5 A	1.5 A	1.5 A	1.5 A
Collector-emitter maximum voltage	160 V	160 V	160 V	160 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	70	70	120
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3
Number of components	1	1	1	1
Number of terminals	2	3	2	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	10 W	10 W	10 W	10 W
surface mount	YES	NO	YES	NO
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz

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