SED1278
CMOS DOT MATRIX LCD CONTROLLER DRIVER
s
DESCRIPTION
The SED1278 is a character LCD controller-driver, capable of driving displays as large as 2 lines of 8
characters (5
×
8 pixels), with minimum external components.
The SED1278 has an internal CGROM consisting of 240 characters (5
×
7) plus the underline cursor, JIS,
ASCII, and eight user-programmable characters in RAM.
The SED1278 has 40 segment output and 16 common output built-in. Thus, one chip is capable of displaying
up to 16 characters. The SED1278 can display one line of 48 characters using an SED1681F (80-bit output)
as an expansion segment driver.
The SED1278 is fabricated using a silicon gate CMOS technology process and features very low power
dissipation. This makes the device suitable for handheld and portable applications.
s
FEATURES
•
Low-power CMOS technology
•
40 segment output
•
16 common output
•
Duty: 1/8 or 1/16 (set by command)
•
4/8-bit CPU data interface, TTL compatible
•
Two frame AC drive wave form
•
CGROM: .................................... 240 characters
•
CGRAM: ........................................ 8 characters
•
Display data RAM: ... 80
×
8 bits (80 characters)
•
Recommended expansion segment driver:
SED1181F (64 output)
LA
•
Built-in power on power-on reset
•
Built-in RC oscillator
•
Built-in LCD driver voltage-divider network
•
TTL compatible CPU interface
Logic: 4.5V to 5.5V
•
Supply voltage ................... LCD: 3.5V to 5.5V
•
Package:
QFP5-80 pins (F
0A
, F
0B
, F
0C
, F
0D
, F
0G
, F
0H
)
Al pad (D
0A
, D
0B
, D
0C
, D
0D
, D
0G
, D
0H
)
SED1681F (80 output)
s
SYSTEM BLOCK DIAGRAM
40 SEG
DATA
CPU
CONTROL
SED1278
16 COM
20 CHAR
×
2 LINES
64 SEG
XSCL, LP
D0
SED1181
287
SED1278
s
BLOCK DIAGRAM
OSC1 OSC2
Instruction Decoder
Address
Counter ACC
Cursor/
Brink Control
Refresh Address Counter
7
7
8
E
R/W
RS
I/O Control
Instruction Register
DB0
DB7
I/O Buffer
Oscillation
Circuit
8
XSCL
LP
FR
M
P
X
Data Register
Timing Generator
Display Data RAM
DD RAM
80 Bytes
Shift Register 16 Bits
Common Driving
Output Circuit
M
P
X
8
COM1
COM16
SEG1
V
DD
V
SS
V1
V2
V3
V4
V5
8
Character
Generator
RAM
(CG-RAM)
64 Bytes
5
M
P
5
Character
Generator
RAM
(CG-RAM)
5 x 10 x 240 Bits
5
X
Segment Driving
Output Circuit
SEG40
Latch Circuit
40 Bits
Parallel/Serial
Data Converter
Shift Register
40 Bits
D0
s
PIN CONFIGURATION
SEG38
SEG37
SEG36
SEG35
SEG34
SEG33
SEG32
SEG31
SEG30
SEG29
SEG28
SEG27
SEG26
SEG25
SEG24
SEG23
SEG39
SEG40
COM16
COM15
COM14
COM13
COM12
COM11
COM10
COM9
COM8
COM7
COM6
COM5
COM4
COM3
COM2
COM1
DB7
DB6
DB5
DB4
DB3
DB2
60
55
50
45
65
40
70
35
SED1278F
75
Index
30
80
1
5
10
15
20
25
DB1
DB0
E
R/W
RS
DP
FR
V
DD
XSCL
LP
V5
V4
V3
V2
V1
OSC2
SEG22
SEG21
SEG20
SEG19
SEG18
SEG17
SEG16
SEG15
SEG14
SEG13
SEG12
SEG11
SEG10
SEG9
SEG8
SEG7
SEG6
SEG5
SEG4
SEG3
SEG2
SEG1
V
SS
OSC1
288
SED1278
s
PIN DESCRIPTION
Symbol
RS
R/W
E
DB0 to DB7
LP
XSCL
FR
DO
COM1 to COM16
No. of signals
1
1
1
8
1
1
1
1
16
Register select signal
Read/write select signal
Read/write execute signal
Data bus
Data latching pulse
Data transfer clock
LCD AC driving signal
Serial data
Common outputs
COM9 to COM16 : non-select for 1/8 duty
COM12 to COM16: non-select for 1/11 duty
SEG1 to SEG40
V1 to V5
V
DD
V
SS
OSC1
OSC2
*1
40
5
1
1
2
RS
0
0
1
1
Segment outputs
LCD driving power (V5≥V
SS
)
+5V
0V (GND)
Used to connect resistor (typ. 91KΩ) for oscillation;
OSC1 is for external clock input.
R/W
0
1
0
1
1
1
E
Operation
Instruction write cycle
Busy flag read cycle
Address counter read cycle
DD RAM or CG RAM data write cycle
DD RAM or CG RAM data read cycle
*1
Functions
s
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
•
(V
SS
= 0V, T
a
= 25°C)
Parameter
Supply voltage (1)
Supply voltage (2)
Input voltage
Output voltage
Power dissipation
Operating temperature
Storage temperature
Soldering temperature and time
Symbol
V
DD
V1 to V5
V
I
V
O
P
D
T
opr
T
stg
T
sol
Rating
–0.3 to 7.0
–0.3 to V
DD
+0.3
–0.3 to V
DD
+0.3
–0.3 to V
DD
+0.3
300
–20 to 75
–65 to 150
260°C•10s (at lead)
Unit
V
V
V
V
mW
°C
°C
—
Note:
The following condition must always hold true: V
DD
≥
V1
≥
V2
≥
V3
≥
V4
≥
V5
289
SED1278
•
DC Characteristics
Parameter
“H” level input voltage (1)
“L” level input voltage (1)
“H” level input voltage (2)
“L” level input voltage (2)
“H” level output voltage (1)
“L” level output voltage (1)
“H” level output voltage (2)
“L” level output voltage (2)
Driver-on resistor (COM)
Driver-on resistor (SEG)
I/O leakage current
Pull-up MOS current
Supply current
External clock operation
External clock operating frequency
(V
DD
= 5.0V
±10%,
V
SS
= 0V, T
a
= –20 to 75°C)
Symbol
V
IH1
V
IL1
V
IH2
V
IL2
V
OH1
V
OL1
V
OH2
V
OL2
R
COM
R
SEG
I
IL
–I
P
I
op
f
EXTCL
Duty
tr
EXTCL
tf
EXTCL
f
OSC
f
OSC
V
LCD
R
f
=91kΩ±2%
Ceramic filter
V
DD
–V5
I
OH
=–0.205mA
I
OL
=1.6mA
I
OH
=–0.04mA
I
OL
=0.04mA
|V
COM
–V
n
|=0.5V
|V
SEG
–V
n
|=0.5V
V
I
=0 to V
DD
V
DD
=5V
Rf oscillation, from external clock
V
DD
=5V, f
OSC
=f
CP
=270kHz
Condition
Applicable Pin
DB0~DB7
RS, R/W, E
OSC1
DB0~DB7
XSCL
LP
D0
COM1~16
SEG1~40
Min
2.0
V
SS
V
DD
–1.0
V
SS
2.4
—
0.9V
DD
—
—
—
—
50
Typ
—
—
—
—
—
—
—
—
2
2.5
—
125
0.5
250
50
—
—
270
250
—
Max
V
DD
0.8
V
DD
1.0
—
0.4
—
0.1V
DD
10
10
1
250
0.8
350
55
0.2
0.2
350
255
V
DD
Unit
V
V
V
V
V
V
V
V
kΩ
kΩ
µA
µA
mA
kHz
%
µs
µs
kHz
kHz
V
V
DD
—
125
45
—
—
190
245
3.0
External clock duty
External clock rise time
External clock fall time
Oscillation frequency
Oscillation frequency
LCD driving voltage
Internal clock operation (Rf oscillation)
Internal clock operation (Ceramic filter oscillation)
•
°
AC Characteristics
Read cycle
Parameter
Enable cycle time
Enable “H” level pulse width
Enable rise/fall time
RS, R/W setup time
RS, R/W address hold time
Read data output delay
Read data hold time
Symbol
t
cycE
t
WEH
t
rE
, t
fE
t
AS
t
AH
t
RD
t
DHR
(V
DD
= 5.0V
±
10%, V
SS
= 0V, T
a
= –20 to 75°C)
Conditions
Min
500
220
—
40
10
C
L
=100pF
—
20
Typ
—
—
—
—
—
—
—
Max
—
—
25
—
—
120
—
Unit
ns
ns
ns
ns
ns
ns
ns
290
SED1278
°
Write cycle
Parameter
Enable cycle time
Enable “H” level pulse width
Enable rise/fall time
RS, R/W setup time
RS, R/W address hold time
Data setup time
Write data hold time
Symbol
t
cycE
t
WEH
t
rE
, t
fE
t
AS
t
AH
t
DS
t
DH
(V
DD
= 5.0V±10%, V
SS
= 0V, T
a
= –20 to 75°C)
Conditions
Min
500
220
—
40
10
60
10
Typ
—
—
—
—
—
—
—
Max
—
—
25
—
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
•
°
Timing Chart
Read cycle
RS
V
IH1
V
IL1
V
IH1
V
IL1
t
AS
t
AH
V
IH1
R/W
V
IH1
t
WEH
t
AH
V
IH1
E
V
IL1
V
IH1
t
fE
V
IL1
V
IL1
t
rE
t
RD
V
OH1
V
OL1
t
DHR
Significant
Data
V
OH1
V
OL1
DB0 to DB7
t
cycE
°
Write cycle
RS
V
IH1
V
IL1
V
IH1
V
IL1
t
AS
t
AH
V
IL1
R/W
V
IL1
t
WEH
t
AH
V
IH1
E
V
IL1
V
IH1
t
fE
V
IL1
V
IL1
t
rE
t
DS
V
IH1
V
IL1
t
DH
V
IH1
V
IL1
DB0 to DB7
Significant
Data
t
cycE
291
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