Transistor
2SC4417
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
Unit: mm
2.1±0.1
s
Features
q
q
q
0.425
1.25±0.1
0.425
High transition frequency f
T
.
Satisfactory linearity of forward current transfer ratio h
FE
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
45
35
4
50
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.7±0.1
0 to 0.1
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol :
2Z
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
(Ta=25˚C)
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
Conditions
V
CE
= 20V, I
B
= 0
I
C
= 10µA, I
E
= 0
I
E
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 10V, I
E
= –10mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 10.7MHz
500
1.5
45
35
4
20
50
100
0.5
V
MHz
pF
min
typ
max
10
Unit
µA
V
V
V
0.15
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta=25˚C)
0.2
0.3
–0
+0.1
1
Transistor
P
C
— Ta
240
80
70
200
2SC4417
I
C
— V
CE
60
25˚C
I
B
=2.0mA
1.8mA
1.6mA
50
40
30
20
10
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
50
V
CE
=10V
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
60
160
Collector current I
C
(mA)
Ta=75˚C
40
–25˚C
120
30
80
20
40
10
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
25˚C
0.1
0.03
0.01
0.1
–25˚C
Ta=75˚C
I
C
/I
B
=10
120
h
FE
— I
C
600
V
CE
=10V
V
CB
=10V
Ta=25˚C
f
T
— I
E
Forward current transfer ratio h
FE
100
Transition frequency f
T
(MHz)
10
30
100
500
80
Ta=75˚C
60
25˚C
40
–25˚C
400
300
200
20
100
0.3
1
3
10
30
100
0
0.1
0.3
1
3
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
I
E
=0
f=1MHz
Ta=25˚C
C
re
— V
CE
Common emitter reverse transfer capacitance C
re
(pF)
2.4
I
C
=1mA
f=10.7MHz
Ta=25˚C
3.0
2.5
2.0
2.0
1.6
1.5
1.2
1.0
0.8
0.5
0.4
0
1
3
10
30
100
0
1
3
10
30
100
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
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