LM28HC256-120/B datasheet, PDF

LM28HC256-120/B: DescriptionEEPROM, 32KX8, 120ns, Parallel, CMOS, CQCC32; Categorystorage storage; File Size419KB，12 Pages; ManufacturerLSC/CSI; Websitehttps://lsicsi.com

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LM28HC256-120/B Overview

EEPROM, 32KX8, 120ns, Parallel, CMOS, CQCC32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	QCCN, LCC32,.45X.55
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Is Samacsys	N
Maximum access time	120 ns
Other features	AUTOMATIC WRITE;PAGE WRITE;BULK ERASE
command user interface	NO
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	R-CQCC-N32
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Encapsulate equivalent code	LCC32,.45X.55
Package shape	RECTANGULAR
Package form	CHIP CARRIER
page size	64 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.00035 A
Maximum slew rate	0.08 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
Maximum write cycle time (tWC)	10 ms
Base Number Matches	1

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