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HY5PS1G831AFP-Y5

Description
DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA68, FBGA-68
Categorystorage    storage   
File Size575KB,36 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Environmental Compliance
Download Datasheet Parametric View All

HY5PS1G831AFP-Y5 Overview

DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA68, FBGA-68

HY5PS1G831AFP-Y5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeBGA
package instructionTFBGA, BGA68,9X19,32
Contacts68
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
access modeMULTI BANK PAGE BURST
Maximum access time0.45 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)333 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B68
JESD-609 codee1
length17.5 mm
memory density1073741824 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals68
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
organize128MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA68,9X19,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width11 mm
Base Number Matches1
HY5PS1G431A(L)FP
HY5PS1G831A(L)FP
HY5PS1G1631A(L)FP
1Gb DDR2 SDRAM
HY5PS1G431A(L)FP
HY5PS1G831A(L)FP
HY5PS1G1631A(L)FP
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.7 / Oct. 2007
1

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