EEWORLDEEWORLDEEWORLD

Part Number

Search

2SC4511

Description
Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
CategoryDiscrete semiconductor    The transistor   
File Size23KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
Download Datasheet Parametric View All

2SC4511 Overview

Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

2SC4511 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionTO-220F, FM20, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)6 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
2SC4511
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1725)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
120
80
6
6
3
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
10
max
10
max
80
min
50
min
0.5
max
20
typ
110
typ
V
MHz
pF
13.0min
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
∗h
FE
Rank
Conditions
V
CB
=120V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
µ
A
V
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
O(50 to100), P(70 to140), Y(90 to180)
2.54
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.3
I
B2
(A)
–0.3
t
on
(
µ
s)
0.16
typ
t
stg
(
µ
s)
2.60
typ
t
f
(
µ
s)
0.34
typ
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
0m
A
15
0m
A
10
0m
A
80m
A
V
CE
( sat) – I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on Vo lt a ge V
C E (s at)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
6
( V
CE
= 4 V )
6
20
5
C o l l e c to r C u r r e n t I
C
( A)
50 m A
C o l l ec to r C u r r e n t I
C
( A)
4
2
4
3
30mA
125
˚C (
Cas
e Te
25˚C
mp
(Cas
e Tem
)
p)
1
I
C
= 6A
4A
2A
0
0
0. 5
1 .0
1. 5
0
0
0
0
1
2
3
4
–30˚C
I
B
=10mA
(Case
2
20mA
1
2
1
B a s e - E m i tt o r Vo l ta g e V
BE
( V)
Temp
)
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
2
Co ll e ct o r -Em i t t er Vo l tag e V
C E
(V )
Ba s e Cu r r en t I
B
( A)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
=4 V )
300
D C C u r r e n t G ai n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4V)
200
1 2 5˚ C
D C C ur r en t Ga i n h
FE
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
5
θ
j - a
– t Characteristics
100
25 ˚ C
– 3 0˚ C
100
Typ
50
1
50
0.5
0.4
1
10
100
Time t(ms)
1 0 00 2 0 0 0
30
0.02
0. 1
0.5
1
56
20
0.02
0. 1
0 .5
1
56
Co l le ct o r Cu rre nt I
C
(A )
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
40
20
10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
30
Co lle ct o r C u r r e n t I
C
( A )
5
Safe Operating Area
(Single Pulse)
30
10
m
P c – Ta Derating
10
DC
0m
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
s
W
s
ith
Typ
20
In
fin
ite
he
20
1
0.5
at
si
nk
10
10
Without Heatsink
Natural Cooling
0.1
Without Heatsink
2
5
10
50
10 0
0
0
25
50
75
10 0
125
150
0
–0.02
–0 . 1
–1
–6
0.05
3
Emi t t e r C ur ren t I
E
(A )
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( ˚ C )
111

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1157  1044  1041  1956  2501  24  22  21  40  51 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号