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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SC4585
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2SC4585

Description
Switching Power Transistor(10A NPN)
CategoryDiscrete semiconductor    The transistor   
File Size301KB，10 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
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2SC4585 Overview

Switching Power Transistor(10A NPN)

2SC4585 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)10 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Humidity sensitivity level2
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment85 W
Maximum power dissipation(Abs)85 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
Maximum off time (toff)3800 ns
Maximum opening time (tons)500 ns
VCEsat-Max1 V
Base Number Matches1

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Download Datasheet
SHINDENGEN
Switching Power Transistor
HFX Series
(TP10W80HFX)
10A NPN
2SC4585
OUTLINE DIMENSIONS
Case : ITO-3P
Unit : mm
RATINGS
●Absolute
Maximum Ratings
Item
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Dielectric Strength
Mounting Torque
Symbol
Tstg
Tj
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
Vdis
TOR
Conditions
Tc = 25℃
Terminals to case, AC
1
minute
(Recommended torque : 0.5N½m)
Ratings
-55½150
150
1200
800
7
10
20
4
8
85
2
0.8
Ratings
Min 800
Max 0.1
Max 0.1
Max 0.1
Min 8
Min 7
Max
1.0
Max
1.5
Max
1.47
TYP 8
Max 0.5
Max 3.5
Max 0.3
Unit
℃
℃
V
V
V
A
A
W
kV
N½m
●Electrical
Characteristics (Tc=25℃)
Item
Symbol
V
CEO
(sus)
Collector to Emitter Sustaining Voltage
I
CBO
Collector Cutoff Current
I
CEO
Emitter Cutoff Current
I
EBO
h
FE
DC Current Gain
h
FEL
V
CE
(sat)
Collector to Emitter Saturation Voltage
V
BE
(sat)
Base to Emitter Saturation Voltage
θjc
Thermal Resistance
f
T
Transition Frequency
ton
Turn on Time
ts
Storage Time
Fall Time
tf
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Conditions
I
C
= 0.2A
At rated Voltage
At rated Voltage
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
=
1mA
I
C
= 5A
I
B
=
1A
Junction to case
V
CE
=
10V,
I
C
=
1A
I
C
= 5A
I
B1
=
1A,
I
B2
= 2A
R
L
= 50Ω, V
BB2
= 4V
Unit
V
mA
mA
V
V
℃/W
MHz
μs

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