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HN1D03FUTE85R

Description
DIODE 0.08 A, 4 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size117KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

HN1D03FUTE85R Overview

DIODE 0.08 A, 4 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode

HN1D03FUTE85R Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionR-PDSO-G6
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationCOMPLEX
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G6
Maximum non-repetitive peak forward current1 A
Number of components4
Number of terminals6
Maximum operating temperature125 °C
Maximum output current0.08 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.6 W
Certification statusNot Qualified
Maximum reverse current0.5 µA
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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