Power Transistors
2SC5036, 2SC5036A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s
Features
q
q
q
q
q
4.6±0.2
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2
Solder Dip
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
(T
C
=25˚C)
Ratings
900
1000
900
1000
800
7
2
1
0.3
30
2
150
–55 to +150
Unit
V
15.0±0.3
3.0±0.2
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SC5036
2SC5036A
2SC5036
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25°C
P
C
T
j
T
stg
13.7
–0.2
+0.5
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
1 2 3
2.6±0.1
0.7±0.1
7°
emitter voltage 2SC5036A
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Junction temperature
Storage temperature
V
V
V
A
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
2SC5036
2SC5036A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
CB
= 1000V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 0.2A
I
C
= 0.2A, I
B
= 0.04A
I
C
= 0.2A, I
B
= 0.04A
V
CE
= 10V, I
C
= 0.05A, f = 1MHz
I
C
= 0.2A, I
B1
= 0.04A, I
B2
= – 0.08A,
V
CC
= 250V
15
0.7
2.5
0.3
800
8
3
1.5
1.5
V
V
MHz
µs
µs
µs
min
typ
max
50
50
50
Unit
µA
µA
µA
V
1
Power Transistors
P
C
— Ta
40
1.2
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
1.0
I
B
=400mA
350mA
300mA
250mA
200mA
150mA
100mA
80mA
60mA
40mA
20mA
0.2
2SC5036, 2SC5036A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=5
30
10
3
–25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=100˚C
25˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
30
Collector current I
C
(A)
(1)
0.8
20
0.6
0.4
10
(2)
(3)
(4)
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=5
1000
V
CE
=5V
100
f
T
— I
C
V
CE
=10V
f=1MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
30
300
Transition frequency f
T
(MHz)
10
30
10
100
10
3
30
3
1
T
C
=–25˚C
25˚C
100˚C
10
1
0.3
3
T
C
=–25˚C
25˚C
100˚C
0.1
0.3
1
3
0.3
0.1
0.01 0.03
0.1
0.3
1
3
10
1
0.01 0.03
0.1
0.001 0.003 0.01 0.03
0.1
0.3
1
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
1000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=–I
B2
)
V
CC
=200V
T
C
=25˚C
Area of safe operation (ASO)
10
3
Non repetitive pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
Switching time t
on
,t
stg
,t
f
(
µs
)
300
10
3
t
stg
1
t
on
0.3
0.1
0.03
Collector current I
C
(A)
1
0.3
0.1
0.03
0.01
0.003
0.001
0.3s
t=10ms
100
30
10
t
f
3
1
1
3
10
30
100
0.01
0
0.2
0.4
0.6
0.8
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
Power Transistors
Area of safe operation, reverse bias ASO
1.6
1.4
L
coil
=100µH
I
C
/I
B
=5
(I
B1
=–I
B2
)
T
C
=25˚C
2SC5036, 2SC5036A
Reverse bias ASO measuring circuit
L coil
I
B1
T.U.T
I
C
Collector current I
C
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
2SC5036A
2SC5036
I
C
V
in
–I
B2
V
CC
t
W
Vclamp
200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage V
CE
(V)
R
th(t)
— t
10000
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V
×
0.2A (2W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
Thermal resistance R
th
(t) (˚C/W)
1000
100
(1)
10
(2)
1
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
Embedded System
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