RN1707JE~RN1709JE
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN1707JE,RN1708JE,RN1709JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (5-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
•
•
A wide range of resistor values is available to use in various circuit
designs.
Complementary to RN2707JE to RN2709JE
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
R2 (kΩ)
47
47
22
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1707JE
RN1708JE
R1 (kΩ)
10
22
47
B
R1
R2
JEDEC
JEITA
TOSHIBA
Weight:3mg (typ.)
―
―
2-2P1D
RN1709JE
E
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1707JE to 1709JE
RN1707JE
Emitter-base voltage
RN1708JE
RN1709JE
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1707JE to 1709JE
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
100
100
150
−55
to150
mA
mW
°C
°C
V
Unit
V
V
1
2
3
(top view)
5
Q1
4
Q2
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2010-05-19
Integrated technical exchanges
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