T10A270EB datasheet, PDF - EEWORLD Datasheet

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T10A270EB: DescriptionSilicon Surge Protector, 360V V(BO) Max, 30A; CategoryAnalog mixed-signal IC Trigger device; File Size49KB，2 Pages; ManufacturerCrydom; Websitehttp://www.crydom.com/en/index.shtml

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T10A270EB Overview

Silicon Surge Protector, 360V V(BO) Max, 30A

T10A270EB Parametric

Parameter Name	Attribute value
package instruction	LONG FORM, O-PALF-W2
Reach Compliance Code	compliant
Is Samacsys	N
Maximum breakover voltage	360 V
Minimum breakover voltage	270 V
Shell connection	ISOLATED
Configuration	SINGLE
Maximum off-state DC voltage	240 V
Maximum holding current	180 mA
JESD-30 code	O-PALF-W2
On-state non-repetitive peak current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Repeated peak reverse voltage	240 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Trigger device type	SILICON SURGE PROTECTOR
Base Number Matches	1

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Thyristors (SiBOD

™

Breakover Devices)

T10A

Series

“Crow Bar” Protection

To protect sensitive telecommunications

circuitry, Crydom Thyristors (SiBOD

™

Breakover Devices) “crow bar” potentially

dangerous transients – switching them to

ground and dissipating the voltage to

zero. This approach can handle more

energy than TVS diode “clamping.”

APPLICATION

FEATURES

• Glass passivated junction

• High current diverting capability,

150 A, 8 X 20 µs)

• Low capacitance, less than 100 pF

• UL listed

• Automatic reset

• Does not degrade

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

SYMBOL

PARAMETER

Bi-directional device for telephone and

line card protection.

V

RM

V

BR

I

H

Stand-off voltage

Breakdown voltage

Holding current

T10A

VALUE

UNIT

ABSOLUTE RATINGS (LIMITING VALUES) (TJ + 25°C) L = 10 mm

SYMBOL

PARAMETER

P

I

PP

Power dissipation on infinite heatsink

Peak pulse current

Tamb = 50°C

10 X 1000 µs

10/700 1.5 kV

8-20 µs expo

tp = 20 ms

Non-repetitive

1.7

50

37.5

150

30

100

-40 to 150

150

230

W

A

I

TSM

di/dt

T stg

Tj

T

L

Non-repetitive surge peak on state current

Critical rate of rise of on-state current

Storage and operating junction temperature range

Maximum lead temperature for soldering during

10 s at 4mm from case

A

A/µs

°C

THERMAL RESISTANCES

SYMBOL

PARAMETER

VALUE

T10A

UNIT

Rth (j-i)

Rth (j-a)

DEVICE

TYPE

Junction-leads on infinite heatsink

Junction-ambient on printed circuit

V

RM

(V)

I

RM

@ V

RM

(µA)

V

BR

MIN. @ 1 mA

(V)

V

BO

MAX.

(V)

L = 10 mm

60

100

I

BO

TYP

(mA)

°C/W

I

H

MIN.

(mA)

V

T

TYP

@ 1A

(V)

T10A80

T10A110

T10A140

T10A180

T10A220

T10A270

70

100

120

170

200

240

1

80

110

140

180

215

270

120

135

170

210

265

360

2

4

50

B or E

MINIMUM HOLDING CURRENTS I

H

MIN.

Suffix

B

E

I

H

120

180

To Order: 1-877-502-5500 Fax: 1-619-715-7280

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