EEWORLDEEWORLDEEWORLD

Part Number

Search

FDH600T50R

Description
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35
CategoryDiscrete semiconductor    diode   
File Size27KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FDH600T50R Overview

Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35

FDH600T50R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum reverse recovery time0.006 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
FDH600 / FDLL600
Discrete POWER & Signal
Technologies
FDH / FDLL 600
COLOR BAND MARKING
DEVICE
FDLL600
1ST BAND 2ND BAND
RED
WHITE
LL-34
DO-35
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
50
200
400
600
1.0
4.0
-65 to +200
175
Units
V
mA
mA
mA
A
A
°C
°C
T
stg
T
J
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
FDH/FDLL 600
500
3.33
300
Units
mW
mW/°C
°C/W
ã
1997 Fairchild Semiconductor Corporation

FDH600T50R Related Products

FDH600T50R FDLL600D87Z PTN0805E8251GBTS FDLL600L99Z FDH600T50A FDH600T26R FDH600.TR FDH600T26A
Description Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35 Rectifier Diode, 1 Element, 0.2A, Silicon, LL-34, 2 PIN Fixed Resistor, Thin Film, 0.2W, 8250ohm, 100V, 2% +/-Tol, -25,25ppm/Cel, 0805, Rectifier Diode, 1 Element, 0.2A, Silicon, LL-34, 2 PIN Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35 Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35 Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35 Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35
Reach Compliance Code compliant unknown not_compliant unknown compliant unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Number of terminals 2 2 2 2 2 2 2 2
Package form LONG FORM LONG FORM SMT LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
package instruction O-PALF-W2 O-LELF-R2 - O-LELF-R2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Is Samacsys N - - N N N N N
Shell connection ISOLATED ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON - SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-35 - - - DO-35 DO-35 DO-35 DO-35
JESD-30 code O-PALF-W2 O-LELF-R2 - O-LELF-R2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 - 1 1 1 1 1
Maximum operating temperature 175 °C - 125 °C - 175 °C 175 °C 175 °C 175 °C
Maximum output current 0.2 A 0.2 A - 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
Package body material PLASTIC/EPOXY GLASS - GLASS PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND - ROUND ROUND ROUND ROUND ROUND
Maximum power dissipation 0.5 W 0.5 W - 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse recovery time 0.006 µs 0.006 µs - 0.006 µs 0.006 µs 0.006 µs 0.006 µs 0.006 µs
surface mount NO YES - YES NO NO NO NO
Terminal form WIRE WRAP AROUND - WRAP AROUND WIRE WIRE WIRE WIRE
Terminal location AXIAL END - END AXIAL AXIAL AXIAL AXIAL
Base Number Matches 1 1 - 1 1 1 1 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 724  1314  1413  2216  2607  15  27  29  45  53 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号