Power Transistors
2SC5104
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0±0.3
1.5±0.1
8.5±0.2
6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s
Features
q
q
q
q
q
1.5max.
1.1max.
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25˚C)
Ratings
500
500
400
7
6
3
1.2
30
1.3
150
–55 to +150
Unit
V
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
8.5±0.2
6.0±0.3
1.5
–0.4
V
2.0
3.0
–0.2
V
A
A
A
4.4±0.5
0.8±0.1
2.54±0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08±0.5
1
2
3
W
˚C
˚C
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1.2A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CE
= 10V, I
C
= 0.2A, f = 1MHz
I
C
= 1.5A, I
B1
= 0.15A, I
B2
= – 0.3A,
V
CC
= 200V
10
1.0
3.0
0.3
400
10
8
40
1.0
1.5
V
V
MHz
µs
µs
µs
min
typ
max
100
100
Unit
µA
µA
V
4.4±0.5
14.7±0.5
V
10.0±0.3
+0.4
+0
1
Power Transistors
P
C
— Ta
40
6
T
C
=25˚C
(1) T
C
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
2SC5104
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=5
30
10
3
1
0.3
0.1
0.03
0.01
0.1
T
C
=100˚C
25˚C
–25˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
5
30
Collector current I
C
(A)
(1)
I
B
=500mA
4
400mA
300mA
3
200mA
100mA
50mA
1
20
2
10
(2)
(3)
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0.3
1
3
10
30
100
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=5
1000
V
CE
=5V
100
f
T
— I
C
V
CE
=10V
f=1MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
30
300
Transition frequency f
T
(MHz)
0.3
1
3
10
30
10
100
T
C
=125˚C
30
25˚C
10
–25˚C
10
3
T
C
=–25˚C
125˚C
25˚C
0.3
3
1
1
3
0.3
0.1
0.1
0.3
1
3
10
30
100
1
0.01 0.03
0.1
0.1
0.01 0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
1000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(2I
B1
=–I
B2
)
V
CC
=200V
T
C
=25˚C
t
stg
Area of safe operation (ASO)
100
30
Non repetitive pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
Switching time t
on
,t
stg
,t
f
(
µs
)
300
Collector current I
C
(A)
10
3
1
t
on
0.3
0.1
0.03
10
3
1
I
CP
I
C
10ms
300ms
t=1ms
100
30
10
t
f
0.3
0.1
0.03
0.01
3
1
1
3
10
30
100
0.01
0
1
2
3
4
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
Power Transistors
Area of safe operation, reverse bias ASO
4.0
3.5
L
coil
=100µH
I
C
/I
B
=5
(I
B1
=–I
B2
)
T
C
=25˚C
2SC5104
Reverse bias ASO measuring circuit
L coil
I
B1
V
in
T.U.T
I
C
Collector current I
C
(A)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
I
C
–I
B2
V
CC
t
W
Vclamp
100 200 300 400 500 600 700 800
Collector to emitter voltage V
CE
(V)
R
th(t)
— t
10
3
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
(1)
(2)
10
Thermal resistance R
th
(t) (˚C/W)
10
2
1
10
–1
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
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