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2SC5125

Description
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
CategoryDiscrete semiconductor    The transistor   
File Size93KB,2 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

2SC5125 Overview

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

2SC5125 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-CDFM-F6
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionEMITTER
Maximum collector current (IC)25 A
Collector-emitter maximum voltage17 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F6
Number of components1
Number of terminals6
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)170 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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