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RF2417

Description
Narrow Band Medium Power Amplifier, 925MHz Min, 960MHz Max, 1 Func, BICMOS, 3 X 3 MM, QFN, LCC-16
CategoryWireless rf/communication    Radio frequency and microwave   
File Size653KB,16 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Download Datasheet Parametric View All

RF2417 Overview

Narrow Band Medium Power Amplifier, 925MHz Min, 960MHz Max, 1 Func, BICMOS, 3 X 3 MM, QFN, LCC-16

RF2417 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionLCC16,.12SQ,20
Reach Compliance Codeunknown
Is SamacsysN
Other featuresIT CAN ALSO OPERATE AT 1805 TO 1880 MHZ AND 1930 TO 1990 MHZ
Characteristic impedance50 Ω
structureCOMPONENT
Gain17 dB
Maximum input power (CW)6 dBm
JESD-609 codee0
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals16
Maximum operating frequency960 MHz
Minimum operating frequency925 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC
Encapsulate equivalent codeLCC16,.12SQ,20
power supply3 V
RF/Microwave Device TypesNARROW BAND MEDIUM POWER
Maximum slew rate4.5 mA
surface mountYES
technologyBICMOS
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
Preliminary
0
Typical Applications
• Tri-Band EGSM/DCS/PCS Handsets
RF2417
TRI-BAND LOW NOISE AMPLIFIER
• Dual-Band EGSM/DCS Handsets
Product Description
The RF2417 is a highly-integrated, low-power and low-
cost tri-band LNA for EGSM-based multi-band handset
applications. All input and output ports include on-chip
matching, thus minimizing external components. The
device supports the worldwide EGSM and DCS bands
and the North American PCS band. A 20dB gain reduc-
tion mode is provided. Three mode-control pins control
gain and band selection. Unused functions are powered
down for the lowest power consumption. The RF2417 is
packaged in a 3mmx3mm, 16-pin leadless chip carrier,
and is manufactured in the Silicon Germanium (SiGe
HBT) process technology.
-A-
2 PLCS
0.10 C A
3.00
1.50 TYP
2
2 PLCS
0.10 C B
0.70
0.65
0.05 C
0.90
0.85
0.05
0.00
3.00
0.10 C B
2 PLCS
2.75 SQ
0.10 C A
2 PLCS
0.60
0.24
TYP
0.10 M C A B
0.30
0.18
PIN 1 ID
R.20
1.45
SQ.
1.15
0.50
0.30
0.50
12°
MAX
-C-
1.37 TYP
-B-
SEATING
PLANE
NOTES:
1. Shaded pin is lead 1.
2 Pin 1 identifier must exist on top surface
of package by identification mark or
feature on the package body. Exact
shape and size is optional.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GSM900 GND
Package Style: QFN, 16-Pin, 3x3
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Features
• On-Chip Matching
• Gain Reduction Mode
BIAS VCC
900 VCC
• 2.7V Supply Voltage
L1
13
12 EGSM900 OUT
11 PCS1800 OUT
10 1819 VCC
16
EGSM900 IN 1
PCS1900 IN 2
DCS1800 IN 3
NC 4
5
DCS1800 GND
15
14
• Low Noise Figure
• Supports Tri-Band Applications
Bias and
Logic
9 DCS1900 OUT
8
Ordering Information
RF2417
RF2417 PCBA
Tri-Band Low Noise Amplifier
Fully Assembled Evaluation Board
6
PCS1900 GND
7
GAIN SELECT
L2
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A5 040908
4-475

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