Transistors
High Voltage Switching Transistor
(400V, 2A)
2SC3969 / 2SC5161
FFeatures
1) Low V
CE(sat)
.
V
CE(sat)
= 0.15V (Typ.)
(I
C
/ I
B
= 1A / 0.2A)
2) High breakdown voltage.
V
CEO
= 400V
3) Fast switching.
t
r
= 1.0µs
(I
C
= 0.8A)
FStructure
Three-layer, diffused planar type
NPN silicon transistor
FExternal
dimensions (Units: mm)
(96-698-C14)
236
Transistors
FAbsolute
maximum ratings (Ta = 25_C)
2SC3969 / 2SC5161
FElectrical
characteristics (Ta = 25_C)
FPackaging
specifications and h
FE
h
FE
values are classified as follows :
237
Transistors
FElectrical
characteristic curves
2SC3969 / 2SC5161
238
Transistors
2SC3969 / 2SC5161
FSwitching
characteristics measurement circuit
239