NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
|S
21e
|
2
= 9 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 8.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• Small Mini-Mold package
EIAJ: SC-70
PACKAGE DIMENSIONS
(Units: mm)
2.1±0.1
1.25±0.1
2.0±0.2
+0.1
0.3
–0
0.65
ORDERING INFORMATION
PART
NUMBER
2SC5179-T1
QUANTITY
ARRANGEMENT
Embossed tape, 8 mm wide, pin
No. 3 (Collector) facing
the perforations
2
T84
0.65
3000 units/reel
2SC5179-T2
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
10
30
150
–65 to +150
V
V
V
mA
mW
°C
°C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
CAUTION;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12103EJ2V0DS00 (2nd edition)
(Previous No. TC-2476)
Date Published November 1996 N
Printed in Japan
0 to 0.1
* Contact your NEC sales representatives to order samples for
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