NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
•
Low current consumption and high gain
S
21e
2
= 12 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
PACKAGE DIMENSIONS
(Units : mm)
2.1 ± 0.2
1.25 ± 0.1
•
Supper Mini-Mold package
S
21e
2
= 11 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
0.3
+0.1
–0.05
2.0 ± 0.2
QUANTITY
ARRANGEMENT
Embossed tape, 8 mm wide, pins No. 3
(base) and No. 4 (emitter) facing the
perforations
Embossed tape, 8 mm wide, pins No. 1
(collector) and No. 2 (emitter) facing the
perforations
0.65
(1.25)
2SC5180–T1
3 000 units/reel
2SC5180–T2
0.60
+0.1
–0.05
*
Contact your NEC sales representatives to order samples for evaluation (available
in batches of 50).
0.9 ± 0.1
0.3
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
10
30
150
–65 to +150
V
V
V
mA
mW
°C
°C
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
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