NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
|S
21e
|
2
= 10.5 dB
TYP.
@ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 9.0 dB
TYP.
@V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• Ultra Super Mini-Mold package
PACKAGE DIMENSIONS
(Units: mm)
1.6 ± 0.1
0.8 ± 0.1
2
1.6 ± 0.1
0.2
+0.1
–0
0.5
0.3
+0.1
–0
0.15
+0.1
–0.05
ORDERING INFORMATION
PART
NUMBER
2SC5181
2SC5181-T1
QUANTITY
50 units/box
3 000 units/reel
ARRANGEMENT
Embossed tape, 8 mm wide, pin No. 3
(collector) facing the perforation
1.0
84
0.5
3
1
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
0.75 ± 0.05
0.6
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
10
30
150
–65 to +150
V
V
V
mA
mW
°C
°C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
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MCU
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