DATA SHEET
SILICON TRANSISTOR
2SC5182
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low noise
• NF = 1.3 dB
• NF = 1.3 dB
TYP.
TYP.
PACKAGE DIMENSIONS
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
2.8±0.2
(Units: mm)
0.4
–0.05
+0.1
• Mini-Mold package
EIAJ: SC-59
1.5
0.65
–0.15
+0.1
0.95
ORDERING INFORMATION
PART
NUMBER
2SC5182-T1
2.9±0.2
2
T86
0.95
Embossed tape, 8 mm wide,
Pin No. 3 (Collector)
facing the perforations
3 000 units/reel
Pins No. 1 (Emitter) and No. 2 (Base)
facing the perforations
0.3
2SC5182-T2
Embossed tape, 8 mm wide,
1.1 to 1.4
Marking
(available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
30
90
150
–65 to +150
V
V
V
mA
mW
˚
C
˚
C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12106EJ2V0DS00 (2nd edition)
(Previous No. TC-2479)
Date Published November 1996 N
Printed in Japan
0 to 0.1
*
Contact your NEC sales representative to order samples for evaluation
©
0.16
–0.06
+0.1
+0.1
1
0.4
–0.05
QUANTITY
ARRANGEMENT
3
1994
2SC5182
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feedback Capacitance
SYMBOL
I
CBO
I
EBO
h
FE
|S
21e
|
2
|S
21e
|
2
NF
NF
f
T
f
T
C
re
9
7
70
7
6
8.5
7.5
1.3
1.3
12
10
0.4
0.8
2.0
2.0
MIN.
TYP.
MAX.
100
100
140
dB
dB
dB
dB
GHz
GHz
pF
UNIT
nA
nA
CONDITIONS
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 20 mA
*1
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
*2
*1
*2
Measured with pulses: Pulse width
≤
350
µ
s, duty cycle
≤
2 %, pulsed.
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
h
FE
Class
Class
Marking
h
FE
FB
T86
70 to 140
2
2SC5182
CHARACTERISTICS CURVES (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
50
P
T
- Total Power Dissipation - mW
Passive Air
Cooling
200
I
C
- Collector Current - mA
40
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
30
100
90 mW
20
10
0
50
100
150
0
0.5
V
BE
- Base to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1.0
T
A
- Ambient Temperature - °C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
I
C
- Collector Current - mA
500
h
FE
- DC Current Gain
20
15
10
5
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
200
100
50
V
CE
= 2 V
V
CE
= 1 V
20
10
0
1.0
2.0
3.0
1
2
5
10
20
50
100
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
f
T
- Gain Bandwidth Product - GHz
14
12
10
8
6
4
2
1
2
5
10
20
50
100
I
C
- Collector Current - mA
V
CE
= 2 V
V
CE
= 1 V
f = 2 GHz
|S
21e
|
2
- Insertion Power Grain - dB
14
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
12
10
V
CE
= 2 V
V
CE
= 1 V
8
6
4
1
2
5
10
20
50
100
I
C
- Collector Current - mA
3
2SC5182
NOISE FIGURE vs.
COLLECTOR CURRENT
4
0.6
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
Cre - Feedback Capacitance - pF
f = 2 GHz
f = 1 MHz
0.5
NF - Noise Figure - dB
2
V
CE
= 1 V
V
CE
= 2 V
0.4
1
0.3
0
1
10
I
C
- Collector Current - mA
100
0.2
0
1.0
2.0
3.0
4.0
5.0
V
CB
- Collector to Base Voltage - V
4
2SC5182
S-PARAMETERS
V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
Ω
FREQUENCY
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.946
0.909
0.853
0.786
0.720
0.637
0.568
0.511
0.464
0.434
0.400
0.387
0.352
0.353
0.377
S11
ANG
–15.2
–30.0
–44.5
–59.1
–73.3
–87.7
–100.0
–112.4
–126.4
–138.9
–149.1
–163.0
–177.2
169.2
154.8
MAG
2.671
2.589
2.488
2.365
2.247
2.104
1.955
1.796
1.728
1.613
1.510
1.435
1.372
1.301
1.296
S21
ANG
165.4
151.2
138.3
125.1
113.0
101.9
92.3
82.5
75.6
67.8
61.3
54.4
49.1
43.4
38.6
MAG
0.063
0.107
0.156
0.198
0.219
0.246
0.260
0.260
0.267
0.249
0.272
0.272
0.271
0.275
0.293
S12
ANG
78.9
71.0
64.3
53.7
47.0
41.9
33.2
32.8
30.5
27.0
27.0
27.0
28.6
28.5
26.8
MAG
0.987
0.954
0.901
0.848
0.781
0.726
0.650
0.607
0.555
0.526
0.516
0.485
0.446
0.439
0.438
S22
ANG
–9.7
–18.4
–27.4
–35.4
–42.3
–48.6
–53.8
–58.8
–63.5
–67.0
–69.4
–75.3
–78.2
–80.7
–85.1
V
CE
= 1 V, I
C
= 3 mA, Z
O
= 50
Ω
FREQUENCY
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.911
0.840
0.765
0.660
0.565
0.490
0.425
0.358
0.316
0.296
0.278
0.269
0.230
0.262
0.303
S11
ANG
–19.5
–37.4
–55.0
–72.6
–88.8
–103.1
–117.7
–131.7
–147.5
–158.4
–169.6
174.9
158.8
144.4
131.3
MAG
5.004
4.722
4.355
3.993
3.592
3.248
2.937
2.630
2.436
2.226
2.067
1.954
1.837
1.736
1.683
S21
ANG
162.9
146.9
132.6
119.0
106.9
96.3
87.5
79.0
72.4
65.8
60.2
53.9
49.4
44.2
40.0
MAG
0.062
0.107
0.149
0.174
0.199
0.210
0.226
0.237
0.227
0.244
0.249
0.283
0.287
0.306
0.320
S12
ANG
80.7
69.9
58.6
46.9
45.5
39.9
39.3
36.0
35.3
38.6
37.3
36.1
41.0
35.6
36.6
MAG
0.966
0.908
0.815
0.727
0.639
0.564
0.494
0.425
0.389
0.352
0.331
0.302
0.273
0.264
0.257
S22
ANG
–13.3
–26.0
–38.0
–47.7
–56.8
–62.2
–67.8
–70.2
–77.0
–80.4
–84.2
–83.3
–91.3
–92.4
–94.5
5
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