Transistor
2SC5190
Silicon NPN epitaxial planer type
For low-voltage high-frequency amplification
Unit: mm
s
q
q
q
2.1±0.1
Features
High transition frequency f
T
.
Small collector output capacitance C
ob
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
9
6
2
30
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.7±0.1
0 to 0.1
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol :
3Y
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Foward transfer gain
Noise figure
(Ta=25˚C)
Symbol
I
CBO
I
EBO
h
FE
C
ob
f
T
| S
21e
|
2
NF
Conditions
V
CB
= 5V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 3V, I
C
= 10mA
V
CB
= 3V, I
E
= 0, f = 1MHz
V
CE
= 3V, I
C
= 10mA, f = 1.5GHz
V
CE
= 0.3V, I
C
= 1mA, f = 0.9GHz
V
CE
= 0.3V, I
C
= 1mA, f = 0.9GHz
40
100
0.4
10
6.5
1.7
min
typ
max
1
1
160
0.7
pF
GHz
dB
dB
Unit
µA
µA
0.15
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta=25˚C)
0.2
0.3
–0
+0.1
1
Transistor
P
C
— Ta
240
60
Ta=25˚C
200
50
25
2SC5190
I
C
— V
CE
30
V
CE
=3V
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
Collector current I
C
(mA)
160
40
I
B
=600µA
500µA
20
Ta=75˚C
15
25˚C
–25˚C
120
30
400µA
20
300µA
200µA
10
100µA
80
10
40
5
0
0
20
40
60
80 100 120 140 160
0
0
1
2
3
4
5
6
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
3
1
0.3
Ta=75˚C
0.1
0.03
0.01
0.003
0.001
0.1
25˚C
–25˚C
I
C
/I
B
=10
120
h
FE
— I
C
1000
V
CE
=3V
300
100
30
10
3
1
0.3
0
0.1
0.1
0.1
f
T
— I
C
V
CE
=3V
f=1.5GHz
Forward current transfer ratio h
FE
100
Ta=75˚C
80
25˚C
60
–25˚C
40
20
0.3
1
3
10
30
100
0.3
1
3
10
30
100
Transition frequency f
T
(GHz)
0.3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(mA)
| S
21e
|
2
— I
C
12
4.8
NF — I
C
1.2
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=0.3V
f=900MHz
I
E
=0
f=1MHz
Ta=25˚C
Forward transfer gain |S21e|
2
(dB)
V
CE
=0.3V
f=900MHz
10
4.0
1.0
8
Noise figure NF (dB)
3.2
0.8
6
2.4
0.6
4
1.6
0.4
2
0.8
0.2
0
0.1
0.3
1
3
10
30
100
0
0.1
0
0.3
1
3
10
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector to base voltage V
CB
(V)
2
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