DATA SHEET
SILICON TRANSISTOR
2SC5191
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
2.9±0.2
PACKAGE DRAWINGS
(Unit: mm)
2.8±0.2
0.4
+0.1
−0.05
1.5
0.65
+0.1
−0.15
0.95
I
C
= 100 mA
• Mini Mold Package
EIAJ: SC-59
2
T88
0.95
ORDERING INFORMATION
PART
NUMBER
2SC5191-T1
0.3
Marking
0.16
+0.1
−0.06
QUANTITY
3 Kpcs/Reel
PACKING STYLE
Embossed tape 8 mm wide.
Pin 3 (collector) face to perforation side of the tape.
Embossed tape 8 mm wide.
Pin 1 (Emitter), Pin 2 (Base) face to perforation side
of the tape.
1.1 to
1.4
2SC5191-T2
3 Kpcs/Reel
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
RATING
9
6
2
100
200
150
−65
to +150
UNIT
V
V
V
mA
mW
°C
°C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P10395EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
©
0 to 0.1
0.4
+0.1
−0.05
1
3
1994
2SC5191
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Collector Capacitance
SYMBOL
I
CBO
I
EBO
h
FE
S
21e
2
S
21e
2
NF
NF
f
T
f
T
C
re
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 1 V, I
C
= 3 mA
Note 1
MIN.
TYP.
MAX.
100
100
UNIT
nA
nA
80
2.5
3.5
6.5
1.7
1.5
4
4.5
8.5
0.75
160
dB
dB
2.5
dB
dB
GHz
GHz
0.85
pF
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
Note 2
Notes 1.
Pulse Measurement: PW
≤
350
µ
s, Duty cycle
≤
2 %, Pulsed
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
Classification
Rank
Marking
h
FE
FB
T88
80 to 160
2
2SC5191
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
Total Power Dissipation P
T
(mW)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
Free Air
Collector Current I
C
(mA)
200
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
100
0
50
100
Ambient Temperature T
A
(°C)
150
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200
µ
A
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 1 V
180
µ
A
20
140
µ
A
120
µ
A
100
µ
A
10
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
0
0.1 0.2
0.5 1
2
5 10 20
Collector Current I
C
(mA)
50 100
DC Current Gain h
FE
160
µ
A
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
Gain Bandwidth Product f
T
(GHz)
INSERTION GAIN vs.
COLLECTOR CURRENT
8
Insertion Power Gain |S
21e
|
2
(dB)
f = 2 GHz
V
CE
= 3 V
V
CE
= 1 V
f = 2 GHz
V
CE
= 3 V
6
V
CE
= 1 V
4
8
6
4
2
0
1
2
5
10
20
Collector Current I
C
(mA)
50
100
2
0
1
2
5
10
20
Collector Current I
C
(mA)
50
100
3
2SC5191
NOISE FIGURE vs.
COLLECTOR CURRENT
5
1.2
f = 2 GHz
Feed-back Capacitance C
re
(pF)
f = 1 MHz
1.0
FEED-BACK CAPACITANCE vs.
COLECTOR TO BASE VOLTAGE
Noise Figure NF (dB)
4
3
V
CE
= 3 V
0.8
2
1
0
1
2
V
CE
= 1 V
0.6
0.4
5
10
20
Collector Current I
C
(mA)
50
100
0
2
4
6
8
Collector to Base Voltage V
CB
(V)
10
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
40
V
CE
= 1 V
I
C
= 3 mA
30
20
MAG
10
|S
21e
|
2
0
0.1
0.2
0.5
1
2
Frequency f (GHz)
5
10
4
Embedded System
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