DATA SHEET
SILICON TRANSISTOR
2SC5192
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
NF = 1.5 dB TYP. @V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
I
C
= 100 mA
PACKAGE DRAWINGS
(Unit: mm)
+0.2
0.4
–0.05
1.5
–0.1
+0.2
2
0.85 0.95
2.9±0.2
(1.8)
EIAJ: SC-61
1
0.6
–0.05
PART NUMBER
2SC5192-T1
QUANTITY
3 Kpcs/Reel
PACKING STYLE
5˚
5˚
1.1
–0.1
2SC5192-T2
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 1 (Collector), Pin 2 (Emitter) face to
perforation side of the tape.
5˚
0 to 0.1
5˚
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
RATING
9
6
2
100
200
150
–65 to +150
UNIT
V
V
V
mA
mW
˚C
˚C
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P10402EJ2V0DS00 (2nd edition)
(Previous No. TD-2485)
Date Published August 1995
Printed in Japan
©
0.16
side of the tape.
+0.1
–0.06
0.8
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to perforation
+0.2
0.4
–0.05
+0.1
+0.1
ORDERING INFORMATION
4
(1.9)
• 4-Pin Mini Mold Package
3
0.4
–0.05
+0.1
+0.1
2.8
–0.3
T88
1994
2SC5192
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Collector Capacitance
SYMBOL
I
CBO
I
EBO
h
FE
|S
21e
|
2
|S
21e
|
2
NF
NF
f
T
f
T
C
re
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 1 V, I
C
= 3 mA
Note 1
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
Note 2
4
80
3
4.0
8
1.7
1.5
4.5
9
0.65
0.8
2.5
MIN.
TYP.
MAX.
100
100
160
dB
dB
dB
dB
GHz
GHz
pF
UNIT
nA
nA
Notes 1.
Pulse Measurement: PW
≤
350
µ
s, Duty cycle
≤
2 %, Pulsed
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
Classification
Rank
Marking
h
FE
FB
T88
80 to 160
2
2SC5192
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
50
V
CE
= 1 V
Total Power Dissipation P
T
(mW)
Free Air
Collector Current I
C
(mA)
50
100
Ambient Temperature T
A
(°C)
150
200
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
100
0
0.5
Base to Emitter Voltage V
BE
(V)
1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200
µ
A
180
µ
A
20
140
µ
A
120
µ
A
100
µ
A
10
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
7
0
0.1 0.2
200
V
CE
= 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
Collector Current I
C
(mA)
DC Current Gain h
FE
160
µ
A
100
0.5 1
2
5 10 20
Collector Current I
C
(mA)
50 100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
f = 2 GHz
10
INSERTION GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
8
V
CE
= 1 V
6
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 3 V
8
V
CE
= 3 V
6
V
CE
= 1 V
4
4
2
0
1
2
0
1
2
5
10
20
Collector Current I
C
(mA)
50
100
2
5
10
20
Collector Current I
C
(mA)
50
100
3
2SC5192
NOISE FIGURE vs.
COLLECTOR CURRENT
5
f = 2 GHz
4
Noise Figure NF (dB)
Feed-back Capacitance C
re
(pF)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
0.8
3
V
CE
= 3 V
0.6
2
1
V
CE
= 1 V
0
1
2
5
10
20
50
Collector Current I
C
(mA)
100
0.4
0.2
0
2.0
4.0
6.0
8.0
Collector to Base Voltage V
CB
(V)
10.0
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
MAXIMUM AVAILABLE GAIN / INSERTION
POWER GAIN vs. FREQUENCY
40
V
CE
= 1 V
I
C
= 3 mA
30
MAG
20
|S
21e
|
2
10
0
0.1
0.2
0.5
1
2
Frequency f (GHz)
5
10
4
Microcontroller MCU
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