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FR256

Description
Rectifier Diode, 1 Phase, 1 Element, 2.5A, 800V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size58KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

FR256 Overview

Rectifier Diode, 1 Phase, 1 Element, 2.5A, 800V V(RRM), Silicon,

FR256 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PALF-W2
Reach Compliance Codeunknown
Is SamacsysN
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BL
FEATURES
Low cost
GALAXY ELECTRICAL
FR251---FR257
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 2.5 A
FAST RECOVERY RECTIFIER
R-3
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC R--3,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.021 unces,0.58 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
FR
251
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
FR
252
100
70
100
FR
253
200
140
200
FR
254
400
280
400
2.5
FR
255
600
420
600
FR
256
800
560
800
FR
257
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
150.0
A
Maximum instantaneous forw ard voltage
@ 2.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
100.0
250
22
35
- 55---- +150
- 55---- + 150
500
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261005
BL
GALAXY ELECTRICAL
1.

FR256 Related Products

FR256 FR257 FR255
Description Rectifier Diode, 1 Phase, 1 Element, 2.5A, 800V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 2.5A, 1000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 2.5A, 600V V(RRM), Silicon,
Is it Rohs certified? conform to conform to conform to
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown
application FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 150 A 150 A 150 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 2.5 A 2.5 A 2.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 800 V 1000 V 600 V
Maximum reverse current 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.5 µs 0.5 µs 0.25 µs
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maker - Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.

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