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FR256-T

Description
Rectifier Diode, 1 Phase, 1 Element, 2.5A, 800V V(RRM), Silicon, PLASTIC, R-3, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size24KB,2 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance  
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FR256-T Overview

Rectifier Diode, 1 Phase, 1 Element, 2.5A, 800V V(RRM), Silicon, PLASTIC, R-3, 2 PIN

FR256-T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionPLASTIC, R-3, 2 PIN
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)265
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FR251
THRU
FR257
FAST RECOVERY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.5 Amperes
FEATURES
*
*
*
*
*
*
Fast switching
Low leakage
Low forward voltage drop
High current capability
High current surge
High reliability
R-3
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.54 gram
1.0 (25.4)
MIN.
.042 (1.1)
DIA.
.040 (1.0)
.160 (4.1)
.138 (3.5)
.160 (4.1)
DIA.
.138 (3.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
A
= 75 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
FR251 FR252 FR253 FR254 FR255 FR255P FR256 FR257 FR257P UNITS
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
2.5
150
60
-55 to + 150
600
420
600
800
560
800
1000
700
1000
1000
700
1000
Volts
Volts
Volts
Amps
Amps
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 2.5A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current Average,
Full Cycle .375” (9.5mm) lead length at T
L
= 55
o
C
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
FR251 FR252 FR253 FR254 FR255 FR255P FR256 FR257 FR257P UNITS
1.3
Volts
5.0
I
R
100
trr
150
250
150
500
250
uAmps
nSec
2002-11
uAmps
o

FR256-T Related Products

FR256-T FR251-B FR257-B FR253-T FR253-B
Description Rectifier Diode, 1 Phase, 1 Element, 2.5A, 800V V(RRM), Silicon, PLASTIC, R-3, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2.5A, 50V V(RRM), Silicon, PLASTIC, R-3, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2.5A, 1000V V(RRM), Silicon, PLASTIC, R-3, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2.5A, 200V V(RRM), Silicon, PLASTIC, R-3, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2.5A, 200V V(RRM), Silicon, PLASTIC, R-3, 2 PIN
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
package instruction PLASTIC, R-3, 2 PIN PLASTIC, R-3, 2 PIN PLASTIC, R-3, 2 PIN PLASTIC, R-3, 2 PIN PLASTIC, R-3, 2 PIN
Contacts 2 2 2 2 2
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609 code e3 e3 e3 e3 e3
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) 265 265 265 265 265
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 50 V 1000 V 200 V 200 V
Maximum reverse recovery time 0.5 µs 0.15 µs 0.5 µs 0.15 µs 0.15 µs
surface mount NO NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1
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