U310-10 datasheet, PDF - EEWORLD Datasheet

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U310-10: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-52, HERMETIC SEALED PACKAGE- 3; CategoryDiscrete semiconductor The transistor; File Size26KB，2 Pages; ManufacturerCalogic; Websitehttp://www.calogic.net/

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U310-10 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-52, HERMETIC SEALED PACKAGE- 3

U310-10 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-52
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
FET technology	JUNCTION
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-52
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	10 dB
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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N-Channel JFET

High Frequency Amplifier

LLC

U308 – U310

FEATURES

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25

o

C unless otherwise specified)

Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA

Storage Temperature . . . . . . . . . . . . . . . . . . . -65

o

C to +200

o

C

Operating Temperature Range . . . . . . . . . . . -55

o

C to +150

o

C

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300

o

C

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Derate above 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . 4mW/

o

C

NOTE:

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

•

High Power Gain

•

Low Noise

Greater The

•

Dynamic Rangeto 75Ω Input 100dB

Easily Matched

•

PIN CONFIGURATION

(TO-52)

ORDERING INFORMATION

Part

U308-10

XU308-10

D

S

Package

Hermetic TO-52

Sorted Chips in Carriers

Temperature Range

-55

o

C to +150

o

C

-55

o

C to +150

o

C

G, C

5021

ELECTRICAL CHARACTERISTICS

(T

A

= 25

o

C unless otherwise specified)

SYMBOL

PARAMETER

U308

U309

U310

UNITS

-150

-25

-4.0

30

1.0

10

250

2.5

5.0

10

17

250

2.5

5.0

10

17

250

2.5

5.0

nV



Hz

√

-2.5

24

-6.0

60

1.0

mA

V

mS

µS

pF

pA

nA

V

TEST CONDITIONS

V

GS

= -15V

V

GS

= 0

T

A

= 125

o

C

MIN TYP MAX MIN TYP MAX MIN TYP MAX

I

GSS

BV

GSS

V

GS(off)

I

DSS

V

GS(f)

g

fg

g

ogs

C

gd

C

gs

e

n

Gate Reverse Current

Gate-Source Breakdown Voltage

Gate-Source Cutoff Voltage

Saturation Drain Current (Note 1)

Gate-Source Forward Voltage

Common-Gate Forward

Transconductance (Note 1)

Common Gate Output Conductance

Drain-Gate Capacitance

Gate-Source Capacitance

Equivalent Short Circuit

Input Noise Voltage

10

17

-25

-1.0

12

-6.0

60

1.0

-150

-25

-1.0

12

-150

I

G

= -1µA, V

DS

= 0

V

DS

= 10V, I

D

= 1nA

V

DS

= 10V, V

GS

= 0

I

G

= 10mA, V

DS

= 0

V

DS

= 10V,

I

D

= 10mA

V

GS

= -10V,

V

DS

= 10V

V

DS

= 10V,

I

D

= 10mA

f = 1kHz

f = 1MHz

(Note 2)

f = 100Hz

(Note 2)

CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX

DS075 REV A

U310-10 Related Products

	U310-10	U309-10
Description	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-52, HERMETIC SEALED PACKAGE- 3	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-52, HERMETIC SEALED PACKAGE- 3
Parts packaging code	TO-52	TO-52
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE
FET technology	JUNCTION	JUNCTION
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-52	TO-52
JESD-30 code	O-MBCY-W3	O-MBCY-W3
Number of components	1	1
Number of terminals	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	10 dB	10 dB
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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