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MBRB735TRRPBF

Description
7.5 A, 35 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size200KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

MBRB735TRRPBF Overview

7.5 A, 35 V, SILICON, RECTIFIER DIODE

MBRB735TRRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.57 V
Maximum non-repetitive peak forward current150 A
Number of components1
Maximum operating temperature150 °C
Maximum output current7.5 A
Maximum repetitive peak reverse voltage35 V
surface mountYES
technologySCHOTTKY
Bulletin PD-21048 rev. A 06/06
MBRB7..PbF
SCHOTTKY RECTIFIER
7.5 Amp
I
F(AV)
= 7.5Amp
V
R
= 35 - 45V
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
I
FSM
V
F
T
J
@ tp = 5
μs
sine
@ 7.5 Apk, T
J
= 125°C
range
Rectangular
waveform
35 - 45
690
0.57
- 65 to 150
V
A
V
°C
Description/ Features
Units
A
The MBRB7.. Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse bat-
tery protection.
150° C T
J
operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Values
7.5
Case Styles
Base
Cathode
2
1
3
N/C
Anode
D
2
PAK
www.irf.com
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