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MBR30150CT

Description
15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size241KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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MBR30150CT Overview

15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR30150CT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
MBR3035CT - MBR30150CT
30.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR MBR
Type Number
3035
CT
3045
CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
T
C
=130
o
C
Peak Repetitive Forward Current (Rated V
R
, Square
Wave, 20KHz) at Tc=130
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
I
F
=15A, Tc=25
o
C
I
F
=15A, Tc=125
o
C
I
F
=30A, Tc=25
o
C
I
F
=30A, Tc=125
o
C
Maximum Instantaneous Reverse Current
@ Tc=25
o
C at
R
ated
DC
Blocking Voltage Per Leg
@ Tc=125
o
C (Note 2)
Voltage Rate of Change, (Rated V
R
)
Typical Junction Capacitance
M
aximum
T
hermal
R
esistance
P
er
L
eg (
N
ote 3)
Maximum Ratings and Electrical Characteristics
o
MBR
3050
CT
MBR
3060
CT
MBR
3090
CT
MBR MBR
30100 30150
CT
CT
Units
V
V
V
A
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
35
24
35
45
31
45
50
35
50
60
42
60
30
30
200
90
63
90
100
70
100
150
105
150
1.0
0.7
0.6
0.82
0.73
0.77
0.67
0.5
0.84
0.70
0.94
0.82
0.95
0.92
1.02
0.98
A
V
I
R
dV/dt
Cj
0.2
15
600
1.0
0.2
10
1,000
460
-65 to +150
-65 to +175
0.2
7.5
320
1.5
0.1
5.0
mA
mA
V/uS
pF
o
R
θJC
T
J
T
STG
Operating Junction Temperature Range
Storage Temperature Range
C/W
o
C
o
C
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate
Version: A06

MBR30150CT Related Products

MBR30150CT MBR3035CT_1 MBR3045CT
Description 15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
Is it Rohs certified? conform to - conform to
package instruction R-PSFM-T3 - GREEN, PLASTIC PACKAGE-3
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
Other features FREE WHEELING DIODE, LOW POWER LOSS - FREE WHEELING DIODE, LOW POWER LOSS
application EFFICIENCY - EFFICIENCY
Shell connection CATHODE - CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS - COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON - SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE
JEDEC-95 code TO-220AB - TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3
Maximum non-repetitive peak forward current 200 A - 200 A
Number of components 2 - 2
Phase 1 - 1
Number of terminals 3 - 3
Maximum operating temperature 150 °C - 150 °C
Minimum operating temperature -65 °C - -65 °C
Maximum output current 15 A - 15 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT
Certification status Not Qualified - Not Qualified
Maximum repetitive peak reverse voltage 150 V - 45 V
surface mount NO - NO
technology SCHOTTKY - SCHOTTKY
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE - SINGLE
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