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MBR20100-1PBF

Description
20 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size254KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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MBR20100-1PBF Overview

20 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA

Bulletin PD-21019 rev. C 01/07
MBRB20...CTPbF
MBR20...CT-1PbF
SCHOTTKY RECTIFIER
20 Amp
I
F(AV)
= 20Amp
V
R
= 80/ 100V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular waveform
(Per Device)
I
FRM
V
RRM
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 10 Apk, T
J
= 125°C
range
@ T
C
= 133°C
(Per Leg)
20
80/90/100
850
0.70
- 65 to 150
A
V
A
V
°C
Description/ Features
Units
A
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse bat-
tery protection.
150° C T
J
operation
Center tap TO-220, D
2
Pak and TO-262 packages
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Values
20
Case Styles
MBRB20...CTPbF
MBR20...CT-1PbF
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
D
2
PAK
www.irf.com
TO-262
1

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