Dual SCHOTTKY Barrier Diodes
These SCHOTTKY barrier diodes are designed for high speed switching
applications, circuit protection, and vol tage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excellent
for hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 V @ I
F
= 10 mAdc
Cathode
6
N/C
5
Anode
4
MBD54DWT1
30 VOLTS
DUAL HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
6
5
4
1
2
3
1
Anode
2
N/C
3
Cathode
SOT–363
CASE 419B–01, STYLE 6
MAXIMUM RATINGS
(T = 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
F
Value
30
150
I
F
T
J
T
stg
1.2
200 Max
125 Max
–55 to +150
Unit
Volts
mW
mW/°C
mA
°C
°C
DEVICE MARKING
MBD54DWT1 = BL
ELECTRICAL CHARACT
ERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
Symbol
V
(BR)R
C
T
I
R
V
F
V
V
F
F
Min
30
—
—
—
—
—
—
—
—
—
—
—
Typ
—
7.6
0.5
0.22
0.41
0.52
—
0.29
0.35
—
—
—
Max
—
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
t
rr
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) Figure 1
Forward Voltage (I F = 1.0 mAdc)
V
F
Forward Voltage (I F = 10 mAdc)
V
F
Forward Current (DC)
I
F
Repetitive Peak Forward Current
I
FRM
Non–Repetitive Peak Forward Current (t <1.0s) I
FSM
MBD54–1/4
MBD110DWT1 MBD330DWT1 MBD770DWT1
INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–363
0.5 mm (min)
0.4 mm (min)
1.9 mm
SOT–363 POWER DISSIPATION
The power dissipation of the SOT–363 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by
TJ(max)
, the maximum rated junction temperature of the
die, R
qJA
, the thermal resistance from the device junction
to ambient, and the operating temperature,
T
A
. Using the
values provided on the data sheet for the SOT–363 package,
PD
can be calculated as follows:
P
D
=
T
J(max)
– T
A
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature
T
A
of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
P
D
=
150°C – 25°C
= 150 milliwatts
833°C/W
The 833°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 150 milliwatts.
There are other alternatives to achieving higher power dis-
sipation from the SOT–363 package. Another alternative
would be to use a ceramic substrate or
an aluminum core board such as Thermal CladE. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than
the rated temperature of the device. When the entire
device is heated to a high temperature, failure to com-
plete soldering within a short time could result in de-
vice failure. Therefore, the following items should al-
ways be observed in order to minimize the thermal stress
to which the devices are subjected.
• Always preheat the device.
• The delta temperature between the preheat and sol-
dering should be 100°C or less.*
• When preheating and soldering, the temperature of
the leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maxi-
mum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied dur-
ing cooling.
* Soldering a device without preheating can cause ex-
cessive thermal shock and stress which can result in
damage to the device.
0.65 mm 0.65 mm
MBD54–3/4
Microcontroller MCU
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