2SD1113 datasheet, PDF - EEWORLD Datasheet

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2SD1113: Description4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size27KB，5 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SD1113 Overview

4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB

2SD1113 Parametric

Parameter Name	Attribute value
Maximum collector current	4 A
Maximum Collector-Emitter Voltage	50 V
Number of terminals	3
Processing package description	TO-220AB, 3 PIN
state	Transferred
Shell connection	COLLECTOR
structure	SINGLE
Minimum DC amplification factor	60
jedec_95_code	TO-220AB
jesd_30_code	R-PSFM-T3
jesd_609_code	e0
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
eak_reflow_temperature__cel_	240
larity_channel_type	NPN
qualification_status	COMMERCIAL
surface mount	NO
terminal coating	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Rated crossover frequency	7 MHz

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2SD1113(K)

Silicon NPN Triple Diffused

Application

Igniter

Outline

TO-220AB

1. Base

2. Collector

(Flange)

3. Emitter

2 3

6 kΩ

(Typ)

450

Ω

(Typ)

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note:

1. Value at T

= 25°C.

Symbol

CBO

CEO

EBO

C(peak)

Tstg

Ratings

300

150

–55 to +150

Unit

°C

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

: http:semiconductor.hitachi.com/

Europe

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

Asia (Taiwan)

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Hitachi Europe GmbH

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Telex: 40815 HITEC HX

2SD1113 Related Products

	2SD1113	2SD1113K
Description	4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB	POWER TRANSISTOR
Number of terminals	3	3
Shell connection	COLLECTOR	COLLECTOR
Number of components	1	1
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON

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