Transistor
2SD1119
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s
Features
2.6±0.1
4.5±0.1
1.6±0.2
1.5±0.1
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
.
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.4max.
45°
1.0
–0.2
+0.1
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
3
2
1
4.0
–0.20
0.4±0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25˚C)
Ratings
40
25
7
5
3
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
marking
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
*
Marking symbol :
T
1
150
–55 ~ +150
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= –50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
*2
min
typ
max
0.1
2.5±0.1
+0.25
Unit
µA
V
V
25
7
230
150
1
150
50
600
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Rank
h
FE1
Q
230 ~ 380
TQ
R
340 ~ 600
TR
Marking Symbol
1
Transistor
P
C
— Ta
1.2
2.4
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
2.0
I
B
=7mA
6mA
1.6
5mA
1.2
4mA
3mA
0.8
2mA
0.4
5
2SD1119
I
C
— V
CE
6
V
CE
=2V
25˚C
Ta=75˚C
4
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
1.0
Collector current I
C
(A)
0.8
0.6
Collector current I
C
(A)
3
0.4
2
0.2
1mA
1
0
0
20
40
60
80 100 120 140 160
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
3
1
0.3
Ta=75˚C
0.1
0.03
0.01
0.003
0.001
0.01 0.03
25˚C
–25˚C
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=30
100
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
I
C
/I
B
=30
600
h
FE
— I
C
V
CE
=2V
Forward current transfer ratio h
FE
500
400
Ta=75˚C
300
25˚C
–25˚C
200
100
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
— I
E
400
350
300
250
200
150
100
50
0
– 0.01 – 0.03 – 0.1 – 0.3
100
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CB
=6V
Ta=25˚C
I
E
=0
f=1MHz
Ta=25˚C
80
Transition frequency f
T
(MHz)
60
40
20
0
–1
–3
–10
1
3
10
30
100
Emitter current I
E
(A)
Collector to base voltage V
CB
(V)
2
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