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BY16

Description
Rectifier Diode, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size22KB,1 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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BY16 Overview

Rectifier Diode, 1 Element, Silicon,

BY16 Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BY 4 ... BY 16
High Voltage Si-Rectifiers
Nominal current – Nennstrom
Si-Hochspannungs-Gleichrichter
1 A...0.3A
4000…16000 V
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: ungegurtet
Ø 6.3 x 21 [mm]
1.9 g
Dimensions / Maße in mm
Maximum ratings and Characteristics
Type
Typ
Rep. peak reverse volt. Surge peak reverse volt.
Period. Spitzensperrspg.
Stoßspitzensperrspg.
V
RRM
[V]
V
RSM
[V]
Grenz- und Kennwerte
Max. forward current
Dauergrenzstrom
I
FAV
[A]
1
)
Forward voltage
Durchlaßspannung
V
F
[V]
2
)
BY 4
BY 6
BY 8
BY 12
BY 16
4000
6000
8000
12000
16000
4000
6000
8000
12000
16000
1.0
1.0
0.5
0.5
0.3
< 4.0
< 4.0
< 8.0
< 8.0
< 15.0
Leakage current
Sperrstrom
T
j
= 25
/
C
T
j
= 100
/
C
V
R
= V
RRM
V
R
= V
RRM
T
A
= 25
/
C
I
R
I
R
I
FSM
< 1
:
A
< 25
:
A
100 A
– 50…+150
/
C
– 50…+150
/
C
< 25 K/W
1
)
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
T
j
T
S
R
thA
1
) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
) at / bei I
FAV
, T
j
= 25
/
C
01.04.2000
127

BY16 Related Products

BY16 BY12
Description Rectifier Diode, 1 Element, Silicon, Rectifier Diode, 1 Element, Silicon,
package instruction O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
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