Power Transistors
2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
For TV vertical deflection output
Complementary to 2SB940 and 2SB940A
Unit: mm
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
4.2±0.2
q
q
q
(T
C
=25˚C)
Ratings
200
150
180
6
3
2
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Parameter
Collector to base voltage
Collector to
2SD1264
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SD1264A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Solder Dip
s
Absolute Maximum Ratings
14.0±0.5
4.0
High collector to emitter V
CEO
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with
one screw
16.7±0.3
7.5±0.2
s
Features
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SD1264
2SD1264A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 50µA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500µA, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 400mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
20
200
150
180
6
60
50
1
1
V
V
MHz
240
min
typ
max
50
50
Unit
µA
µA
V
V
V
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*
h
FE1
Rank classification
Q
60 to 140
P
100 to 240
Rank
h
FE1
1
Power Transistors
P
C
— Ta
50
1.2
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
1.0
I
B
=7mA
2SD1264, 2SD1264A
I
C
— V
CE
1.2
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
30
(1)
0.8
Collector current I
C
(A)
40
1.0
25˚C
T
C
=100˚C
–25˚C
6mA
5mA
4mA
0.6
3mA
0.4
2mA
0.2
0.8
0.6
20
0.4
10
(2)
(3)
(4)
1mA
0.2
0
0
20
40
60
80 100 120 140 160
0
0
4
8
12
16
20
24
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
I
C
/I
B
=10
10000
h
FE
— I
C
1000
V
CE
=10V
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=5V
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
3
1000
300
100
–25˚C
30
10
3
1
0.01 0.03
T
C
=100˚C
25˚C
1
T
C
=100˚C
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01
0.03
0.1
0.3
1
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
10
3
I
CP
I
C
5ms
1ms
DC
0.1
0.03
0.01
0.003
0.001
1
3
10
30
Non repetitive pulse
T
C
=25˚C
10
3
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
1
0.3
t=0.5ms
10
2
10
(2)
1
2SD1264A
2SD1264
10
–1
100
300
1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
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