Power Transistors
2SD1261, 2SD1261A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB938 and 2SB938A
10.0±0.3
Unit: mm
8.5±0.2
6.0±0.5
3.4±0.3
1.0±0.1
q
q
q
High foward current transfer ratio h
FE
High-speed switching
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25˚C)
1.5±0.1
s
Features
1.5max.
10.5min.
2.0
1.1max.
0.8±0.1
0.5max.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1261
2SD1261A
2SD1261
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.54±0.3
5.08±0.5
Ratings
60
80
60
80
5
8
4
40
1.3
150
–55 to +150
Unit
V
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
8.5±0.2
emitter voltage 2SD1261A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
10.0±0.3
6.0±0.3
V
A
A
W
1.5
–0.4
2.0
3.0
–0.2
4.4±0.5
0.8±0.1
2.54±0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08±0.5
˚C
˚C
1
2
3
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD1261
2SD1261A
2SD1261
2SD1261A
2SD1261
2SD1261A
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= –12mA,
V
CC
= 50V
20
0.5
4
1
60
80
1000
1000
min
typ
1:Base
2:Collector
3:Emitter
N Type Package (DS)
4.4±0.5
max
200
200
500
500
2
14.7±0.5
+0.4
+0
Unit
µA
µA
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
10000
2.5
2
4
V
V
MHz
µs
µs
µs
Rank classification
R
Q
P
1000 to 2500 2000 to 5000 4000 to 10000
Internal Connection
B
C
Rank
h
FE2
E
1
Power Transistors
P
C
— Ta
50
10
(1) T
C
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
T
C
=25˚C
I
B
=4.0mA
2SD1261, 2SD1261A
I
C
— V
CE
10
V
CE
=3V
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
Collector current I
C
(A)
40
(1)
8
30
6
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
8
25˚C
6
T
C
=100˚C
–25˚C
20
4
4
10
(2)
(3)
0
0
20
40
60
80 100 120 140 160
2
2
0
0
2
4
6
8
10
0
0
0.8
1.6
2.4
3.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=250
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=100˚C
–25˚C
25˚C
10
5
h
FE
— I
C
10000
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=3V
I
E
=0
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
3000
1000
300
100
30
10
3
1
0.1
10
4
T
C
=100˚C
10
3
25˚C
–25˚C
10
2
0.1
0.3
1
3
10
10
0.01 0.03
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
Area of safe operation (ASO)
100
30
10
3
Non repetitive pulse
T
C
=25˚C
t=10ms
R
th(t)
— t
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
(1)
(2)
10
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10 I
CP
I
C
3
1
0.3
0.1
0.03
0.01
1
3
10
30
300ms
10
2
1ms
1
2SD1261A
2SD1261
10
–1
100
300
1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
Microcontroller MCU
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