Power Transistors
2SD1267, 2SD1267A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB942 and 2SB942A
Unit: mm
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
4.2±0.2
s
Features
q
q
q
7.5±0.2
Solder Dip
4.0
14.0±0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1267
2SD1267A
2SD1267
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25˚C)
Ratings
60
80
60
80
5
8
4
40
2
150
–55 to +150
Unit
V
emitter voltage 2SD1267A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
˚C
˚C
16.7±0.3
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD1267
2SD1267A
2SD1267
2SD1267A
2SD1267
2SD1267A
(T
C
=25˚C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, V
BE
= 0
V
CB
= 80V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
I
C
= 4A, I
B
= 0.4A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 0.4A, I
B2
= – 0.4A,
V
CC
= 50V
20
0.4
1.2
0.5
60
80
70
15
2
1.5
V
V
MHz
µs
µs
µs
250
min
typ
max
400
400
700
700
1
Unit
µA
µA
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
1
Power Transistors
P
C
— Ta
50
6
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
5
I
B
=150mA
2SD1267, 2SD1267A
I
C
— V
CE
8
V
CE
=4V
7
25˚C
T
C
=100˚C
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
Collector current I
C
(A)
20
40
(1)
100mA
4
80mA
60mA
3
40mA
30mA
2
20mA
10mA
1
5mA
0
6
5
4
3
2
1
0
30
20
10
(2)
(3)
(4)
0
0
20
40
60
80 100 120 140 160
0
4
8
12
16
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=10
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=100˚C
10000
h
FE
— I
C
10000
V
CE
=4V
3000
1000
300
100
30
10
3
1
0.01 0.03
f
T
— I
C
V
CE
=10V
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
–25˚C
30
10
3
1
0.01 0.03
25˚C
T
C
=100˚C
25˚C
–25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
100
30
10
3
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10 I
CP
3 I
C
1
0.3
0.1
0.03
0.01
1
3
10
30
10ms
DC
t=1ms
10
2
10
(2)
1
2SD1267A
2SD1267
10
–1
100
300
1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
MCU
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