Power Transistors
2SD1269
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB944
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
4.2±0.2
s
Features
q
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of foward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
130
80
7
8
4
35
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
14.0±0.5
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1A
I
C
= 3A, I
B
= 0.15A
I
C
= 3A, I
B
= 0.15A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
min
typ
max
10
50
Unit
µA
µA
V
80
45
60
260
0.5
1.5
30
0.5
2.5
0.15
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
V
V
MHz
µs
µs
µs
Rank classification
R
60 to 120
Q
90 to 180
P
130 to 260
Rank
h
FE2
1
Power Transistors
P
C
— Ta
50
8
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
7
I
B
=300mA
140mA
120mA
100mA
60mA
40mA
3
2
1
0
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
12
20mA
10mA
2SD1269
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
10
I
C
/I
B
=20
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03
25˚C
–25˚C
T
C
=100˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
40
(1)
30
6
5
4
20
10
(2)
(3)
(4)
0
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
10000
I
C
/I
B
=20
h
FE
— I
C
10000
V
CE
=2V
3000
1000
300
100
30
10
3
1
0.01 0.03
f
T
— I
C
V
CE
=10V
f=10MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=100˚C
–25˚C
25˚C
1000
300
100
–25˚C
30
10
3
1
0.01 0.03
T
C
=100˚C
25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
30
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10 (I
B1
=–I
B2
)
V
CC
=50V
T
C
=25˚C
Area of safe operation (ASO)
100
30
Non repetitive pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
0.1
Switching time t
on
,t
stg
,t
f
(
µs
)
Collector current I
C
(A)
10
3
1
0.3
t
on
0.1
0.03
0.01
10 I
CP
I
C
3
10ms
1
0.3
0.1
0.03
0.01
1ms
DC
t=0.5ms
t
stg
t
f
0.3
1
3
10
30
100
0
1
2
3
4
5
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
Integrated technical exchanges
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