Power Transistors
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Complementary to 2SB1299
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
4.2±0.2
s
Features
q
q
q
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
7.5±0.2
16.7±0.3
φ3.1±0.1
14.0±0.5
s
4.0
Absolute Maximum Ratings
(T
C
=25˚C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25°C
P
C
T
j
T
stg
Ratings
80
100
60
80
6
6
3
1
40
2
150
–55 to +150
Unit
V
2SD1273
2SD1273A
2SD1273
1.4±0.1
1.3±0.2
Solder Dip
0.5
+0.2
–0.1
0.8±0.1
Collector to
base voltage
Collector to
2.54±0.25
5.08±0.5
emitter voltage 2SD1273A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Junction temperature
Storage temperature
V
V
A
A
A
W
˚C
˚C
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD1273
2SD1273A
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
Conditions
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
CB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
50
60
80
500
2500
1
V
MHz
min
typ
max
100
100
100
100
Unit
µA
µA
µA
V
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SD1273
2SD1273A
V
CEO
h
FE*
V
CE(sat)
f
T
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
h
FE
Rank classification
Q
P
O
h
FE
500 to 1000 800 to 1500 1200 to 2500
Rank
Note: Ordering can be made by the common rank (PQ rank h
FE
= 500 to 1500) in the rank classification.
1
Power Transistors
P
C
— Ta
50
1.0
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
I
B
=1.2mA
1.0mA
T
C
=25˚C
2SD1273, 2SD1273A
I
C
— V
CE
5
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
0.7mA
0.6mA
0.6
0.5mA
0.4mA
0.4
0.3mA
0.2mA
0.2
0.1mA
0
Collector current I
C
(A)
40
(1)
0.8
4
T
C
=100˚C
3
30
25˚C
2
–25˚C
1
20
10
(2)
(3)
(4)
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=40
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=100˚C
25˚C
–25˚C
10000
h
FE
— I
C
10000
V
CE
=4V
3000
1000
300
100
30
10
3
1
0.01 0.03
f
T
— I
C
V
CE
=12V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
–25˚C
25˚C
300
100
30
10
3
1
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
T
C
=100˚C
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
100
30
10
3
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
2
10
I
CP
3
I
C
1
0.3
0.1
0.03
0.01
1
3
10
30
10ms
DC
t=1ms
10
(2)
1
2SD1273A
2SD1273
10
–1
100
300
1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
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