Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
0.7±0.1
s
Features
q
q
q
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
4.2±0.2
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
2SD1274
2SD1274A
2SD1274B
2SD1274
2SD1274A
2SD1274B
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
V
CES
V
CBO
Symbol
(T
C
=25˚C)
Ratings
150
200
250
2.54±0.25
16.7±0.3
High collector to base voltage V
CBO
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
7.5±0.2
Unit
14.0±0.5
Solder Dip
4.0
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
V
Collector to
emitter voltage
150
200
250
80
6
5
40
2
150
–55 to +150
V
V
A
W
˚C
˚C
V
5.08±0.5
1
2
3
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD1274
2SD1274A
2SD1274B
(T
C
=25˚C)
Symbol
Conditions
V
CB
= 150V, I
E
= 0
I
CBO
V
CEO(sus)*
V
EBO
h
FE
V
BE
V
CE(sat)
f
T
t
f
V
CB
= 200V, I
E
= 0
V
CB
= 250V, I
E
= 0
I
C
= 0.2A, L = 25mH
I
E
= 1mA, I
C
= 0
V
CE
= 4V, I
C
= 5A
V
CE
= 4V, I
C
= 5A
I
C
= 5A, I
B
= 1A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 5A, I
B1
= 0.8A, V
EB
= –5V
X
L 25mH
Y
1Ω
15V
G
80
I
C
(A)
0.2
0.1
V
CE
(V)
min
typ
max
1
1
1
Unit
mA
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Fall time
*
V
CEO(sus)
80
6
14
1.5
1.6
40
1
V
V
V
V
MHz
µs
Test circuit
60Hz
120Ω
6V
1
Power Transistors
P
C
— Ta
50
6
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
2SD1274, 2SD1274A, 2SD1274B
I
C
— V
CE
8
T
C
=25˚C
5
I
B
=45mA
7
25˚C
V
CE
=4V
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
Collector current I
C
(A)
40
(1)
40mA
35mA
4
30mA
25mA
3
20mA
2
15mA
10mA
1
5mA
0
6
5
4
3
2
1
0
T
C
=100˚C
–25˚C
30
20
10
(2)
(3)
(4)
0
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=10
30
10
3
1
T
C
=100˚C
0.3
0.1
0.03
0.01
0.01 0.03
25˚C
–25˚C
10000
h
FE
— I
C
10000
V
CE
=4V
3000
1000
300
100
30
10
3
1
0.01 0.03
f
T
— I
C
V
CE
=10V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
0.01 0.03
T
C
=100˚C
25˚C
–25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
Area of safe operation (ASO)
100
I
E
=0
f=1MHz
T
C
=25˚C
30
Non repetitive pulse
T
C
=25˚C
Area of safe operation, horizontal operation ASO
20
18
f=15.75kHz, T
C
=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
1
3
10
30
100
Collector current I
C
(A)
10 I
CP
3
1
0.3
0.1
0.03
0.01
I
C
DC
t=1ms
Collector current I
C
(A)
16
14
12
10
8
6
4
2
<1mA
0
1
3
10
30
100
300
1000
0
80
160
240
320
300
1000
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
Collector to emitter voltage V
CE
(V)
2
Embedded System
京公网安备 11010802033920号
EEWORLD
