RN1967FE~RN1969FE
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1967FE,RN1968FE,RN1969FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
Complementary to RN2967FE to RN2969FE
Unit: mm
•
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1967FE
RN1968FE
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
B
R1
R2
RN1969FE
E
JEDEC
JEITA
TOSHIBA
―
―
2-2N1A
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Weight: 3mg (typ.)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1967FE
Emitter-base voltage
RN1968FE
RN1969FE
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
Rating
50
50
6
Unit
V
V
Equivalent Circuit
(top view)
6
5
4
V
EBO
7
15
V
Q1
Q2
I
C
P
C
(Note 1)
T
j
T
stg
100
100
150
−55
to150
mA
mW
°C
°C
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Total rating
1
2010-05-20
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