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RN1117FT(TE85L)

Description
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
CategoryDiscrete semiconductor    The transistor   
File Size187KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN1117FT(TE85L) Overview

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR

RN1117FT(TE85L) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)30
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
RN1114FT~RN1118FT
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Enabling simplified circuit design
Enabling reduction in the quantity of parts and manufacturing process
Complementary to the RN2114FT to 2118FT
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1114FT
RN1115FT
RN1116FT
RN1117FT
RN1118FT
R
1
(kΩ)
1
2.2
4.7
10
47
R
2
(kΩ)
10
10
10
4.7
10
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1114FT to 1118FT
RN1114FT
RN1115FT
Emitter-base voltage
RN1116FT
RN1117FT
RN1118FT
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1114FT to 1118FT
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
5
6
7
15
25
100
100
150
−55
to 150
JEDEC
JEITA
TOSHIBA
2-1B1A
Weight: 2.2 mg (typ.)
Unit
V
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-04-06

RN1117FT(TE85L) Related Products

RN1117FT(TE85L) RN1114FT(TE85L,F) RN1114FT(TE85L) RN1115FT(TE85L,F) RN1116FT(TE85L,F) RN1118FT(TE85L)
Description PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
Is it Rohs certified? incompatible conform to incompatible conform to conform to incompatible
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 30 50 50 50 50 50
Number of components 1 1 1 1 1 1
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W
surface mount YES YES YES YES YES YES
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 - -
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