S E M I C O N D U C T O R
RFD14N06,
RFD14N06SM, RFP14N06
14A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
December 1995
Features
• 14A, 60V
• r
DS(ON)
= 0.100Ω
•
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175
o
C Operating Temperature
Description
The RFD14N06, RFD14N06SM, and RFP14N06 N-channel
power MOSFETs are manufactured using the MegaFET pro-
cess. This process which uses feature sizes approaching
those of LSI integrated circuits, gives optimum utilization of
silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regula-
tors, switching converters, motor drivers, and relay drivers.
These transistors can be operated directly from integrated
circuits.
PACKAGING AVAILABILITY
PART NUMBER
RFD14N06
RFD14N06SM
RFP14N06
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
F14N06
F14N06
RFP14N06
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
RFD14N06SM9A.
G
Formerly developmental type TA09770.
S
Absolute Maximum Ratings
T
C
= +25
o
C
RFD14N06, RFD14N06SM,
RFP14N06
60
60
±20
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to +175
260
UNITS
V
V
V
A
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
W
W/
o
C
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
4002.1
3-9
Specifications RFD14N06, RFD14N06SM, RFP14N06
Electrical Specifications
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 60V,
V
GS
= 0V
V
GS
=
±20V
I
D
= 14A, V
GS
= 10V
V
DD
=30V, I
D
= 7A,
R
L
= 4.3Ω, V
GS
= 10V,
R
GS
= 25Ω
T
C
= +25
o
C
T
C
= +150
o
C
MIN
60
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
DD
= 48V,
I
D
= 14A,
R
L
= 3.42Ω
-
-
-
-
-
-
-
TO-251 and TO-252
TO-220
-
-
TYP
-
-
-
-
-
-
-
14
26
45
17
-
-
-
-
570
185
50
-
-
-
MAX
-
4
1
50
100
0.100
60
-
-
-
-
100
40
25
1.5
-
-
-
3.125
100
80
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
I
GSS
r
DS(ON)
t
ON
t
D(ON)
t
R
t
D(OFF)
t
F
t
OFF
Q
G(TOT)
Q
G(10)
Q
G(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
Source-Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
RR
TEST CONDITIONS
I
SD
= 14A
I
SD
= 14A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
3-10
RFD14N06, RFD14N06SM, RFP14N06
Typical Performance Curves
100
T
C
= +25
o
C
1
Z
θ
JC,
NORMALIZED
THERMAL RESPONSE
I
D
, DRAIN CURRENT (A)
0.5
0.2
P
DM
0.1
0.1
.05
.02
.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
+ T
A
10
1
10
100µs
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
10ms
V
DSS
MAX = 60V
100ms
DC
200
1
SINGLE PULSE
0.01
10
-5
10
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10
-4
10
-3
10
-2
10
-1
10
0
t, RECTANGULAR PULSE DURATION (s)
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
T
C
= +25
o
C
I
DM
, PEAK CURRENT CAPABILITY (A)
V
GS
= 20V
100
V
GS
= 10V
I
FOR TEMPERATURES
ABOVE +25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
16
I
D
, DRAIN CURRENT (A)
12
175
–
T
C
=
I 25
-------------------
-
150
8
4
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
V
GS
= 20V
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
35
30
I
D
, DRAIN CURRENT (A)
25
20
15
10
5
0
PULSE DURATION = 250µs, T
C
= +25
o
C
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
DD
= 15V
35
30
25
20
15
10
5
0
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
10
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-25
o
C
-55
o
C
+175
o
C
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
0
2.0
4.0
6.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
8.0
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
3-11
RFD14N06, RFD14N06SM, RFP14N06
Typical Performance Curves
(Continued)
BV
DSS
, NORMALIZED DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
2.0
V
GS(TH)
, NORMALIZED GATE
2.0
V
GS
= V
DS
, I
D
= 250µA
THRESHOLD VOLTAGE
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-80
-40
0
40
80
120
160
200
0.0
-80
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 7. NORMALIZED DRAIN-SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
r
DS(ON)
, NORMALIZED ON RESISTANCE
2.5
PULSE DURATION = 250µs, V
GS
= 10V, I
D
= 14A
POWER DISSIPATION MULTIPLIER
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0
25
125
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
175
FIGURE 9. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
60
10
V
DD
= BV
DSS
45
V
DD
= BV
DSS
7.5
V
GS
, GATE-SOURCE VOLTAGE (V)
700
C
ISS
600
C, CAPACITANCE (pF)
500
400
C
OSS
300
200
100
0
0
C
RSS
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
30
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 4.28Ω
I
G(REF)
= 0.4mA
V
GS
= 10V
0
G
(
REF
)
-
20
--------------------
I
G
(
ACT
)
I
G
(
REF
)
-
80
--------------------
I
G
(
ACT
)
I
5.0
15
2.5
0
t, TIME (ms)
5
10
15
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
25
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
3-12
RFD14N06, RFD14N06SM, RFP14N06
Typical Performance Curves
(Continued)
50
I
AS
, AVALANCHE CURRENT (A)
STARTING T
J
= +25
o
C
10
STARTING T
J
= +150
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
1
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING.
REFER TO HARRIS APPLICATION NOTES AN9321 AND AN9322
Test Circuits and Waveforms
V
DS
t
P
L
I
AS
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
R
G
-
+
BV
DSS
V
DS
V
DD
V
DD
0V
I
L
0.01Ω
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
V
DD
R
L
V
DS
V
DS
V
GS
t
ON
t
D(ON)
t
R
90%
t
OFF
t
D(OFF)
t
F
90%
10%
10%
90%
0V
R
GS
DUT
V
GS
10%
50%
PULSE WIDTH
50%
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
3-13
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