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2SD1293M

Description
2SD1292 2SD1293M
CategoryDiscrete semiconductor    The transistor   
File Size97KB,1 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric Compare View All

2SD1293M Overview

2SD1292 2SD1293M

2SD1293M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1

2SD1293M Related Products

2SD1293M 2SD1292 2SD1293
Description 2SD1292 2SD1293M 2SD1292 2SD1293M 2SD1292 2SD1293M
Is it Rohs certified? incompatible incompatible -
package instruction IN-LINE, R-PSIP-T3 CYLINDRICAL, O-PBCY-T3 -
Reach Compliance Code unknow unknow -
ECCN code EAR99 EAR99 -
Maximum collector current (IC) 1 A 1 A -
Collector-emitter maximum voltage 80 V 80 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 82 82 -
JESD-30 code R-PSIP-T3 O-PBCY-T3 -
JESD-609 code e0 e0 -
Number of components 1 1 -
Number of terminals 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR ROUND -
Package form IN-LINE CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN NPN -
Maximum power dissipation(Abs) 1 W 0.9 W -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 100 MHz 100 MHz -
Base Number Matches 1 1 -
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