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2SD1328

Description
Silicon NPN epitaxial planer type(For low-voltage output amplification)
CategoryDiscrete semiconductor    The transistor   
File Size30KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

2SD1328 Overview

Silicon NPN epitaxial planer type(For low-voltage output amplification)

2SD1328 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
Transistor
2SD1328
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
0.65±0.15
Unit: mm
2.8
–0.3
+0.2
+0.25
1.5
–0.05
0.65±0.15
s
Features
0.95
q
q
q
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
25
20
12
1
0.5
200
150
–55 ~ +150
V
V
V
A
A
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol :
1D
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
I
C
= 0.5A, I
B
= 20mA
*2
I
C
= 0.5A, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
10
1.0
*2
0 to 0.1
0.1 to 0.3
0.4±0.2
0.8
Parameter
Symbol
Ratings
Unit
+0.2
1.1
–0.1
0.16
–0.06
s
2
Absolute Maximum Ratings
(Ta=25˚C)
+0.1
0.4
–0.05
+0.1
Low collector to emitter saturation voltage V
CE(sat)
.
Low ON resistance R
on
.
High foward current transfer ratio h
FE
.
2.9
–0.05
1
1.9±0.2
+0.2
0.95
3
1.45
min
typ
max
100
Unit
nA
V
V
V
25
20
12
200
0.13
800
0.4
1.2
V
V
MHz
pF
Pulse measurement
*1
h
FE
Rank classification
Rank
h
FE
R
200 ~ 350
1DR
S
300 ~ 500
1DS
T
400 ~ 800
1DT
*3
R
on
Measurement circuit
1kΩ
I
B
=1mA
f=1kHz
V=0.3V
Marking Symbol
V
B
V
V
V
A
R
on
=
V
B
!1000(Ω)
V
A
–V
B
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