Transistor
2SD1328
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
0.65±0.15
Unit: mm
2.8
–0.3
+0.2
+0.25
1.5
–0.05
0.65±0.15
s
Features
0.95
q
q
q
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
25
20
12
1
0.5
200
150
–55 ~ +150
V
V
V
A
A
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol :
1D
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
I
C
= 0.5A, I
B
= 20mA
*2
I
C
= 0.5A, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
10
1.0
*2
0 to 0.1
0.1 to 0.3
0.4±0.2
0.8
Parameter
Symbol
Ratings
Unit
+0.2
1.1
–0.1
0.16
–0.06
s
2
Absolute Maximum Ratings
(Ta=25˚C)
+0.1
0.4
–0.05
+0.1
Low collector to emitter saturation voltage V
CE(sat)
.
Low ON resistance R
on
.
High foward current transfer ratio h
FE
.
2.9
–0.05
1
1.9±0.2
+0.2
0.95
3
1.45
min
typ
max
100
Unit
nA
V
V
V
25
20
12
200
0.13
800
0.4
1.2
V
V
MHz
pF
Ω
Pulse measurement
*1
h
FE
Rank classification
Rank
h
FE
R
200 ~ 350
1DR
S
300 ~ 500
1DS
T
400 ~ 800
1DT
*3
R
on
Measurement circuit
1kΩ
I
B
=1mA
f=1kHz
V=0.3V
Marking Symbol
V
B
V
V
V
A
R
on
=
V
B
!1000(Ω)
V
A
–V
B
1
Transistor
P
C
— Ta
240
1.2
I
B
=4.0mA
200
1.0
Ta=25˚C
3.5mA
3.0mA
0.8
2.5mA
2.0mA
0.6
1.5mA
0.4
1.0mA
0.5mA
0.2
2SD1328
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=75˚C
25˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=25
Collector power dissipation P
C
(mW)
160
120
80
40
0
0
20
40
60
80 100 120 140 160
Collector current I
C
(A)
0
0
1
2
3
4
5
6
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
1200
V
CE
=2V
400
f
T
— I
E
V
CB
=10V
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
1000
Transition frequency f
T
(MHz)
0.3
1
3
10
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
Forward current transfer ratio h
FE
350
300
250
200
150
100
50
800
Ta=75˚C
600
25˚C
–25˚C
400
200
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(A)
C
ob
— V
CB
24
Collector output capacitance C
ob
(pF)
20
I
E
=0
Ta=25˚C
f=1MHz
16
12
8
4
0
1
3
10
30
100
Collector to base voltage V
CB
(V)
2