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2SD1348

Description
50V/4A Switching Applications        
CategoryDiscrete semiconductor    The transistor   
File Size112KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SD1348 Overview

50V/4A Switching Applications        

2SD1348 Parametric

Parameter NameAttribute value
MakerSANYO
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)4 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment10 W
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.5 V

2SD1348 Related Products

2SD1348 2SB986
Description 50V/4A Switching Applications         50V/4A Switching Applications        
Maker SANYO SANYO
Parts packaging code SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 40
JEDEC-95 code TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN PNP
Maximum power consumption environment 10 W 10 W
Maximum power dissipation(Abs) 10 W 1.2 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz
VCEsat-Max 0.5 V 0.7 V
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