Transistor
2SD1330
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
0.4
Unit: mm
6.9±0.1
1.5
1.5 R0.9
R0.9
2.4±0.2 2.0±0.2 3.5±0.1
2.5±0.1
1.0
1.0
q
q
q
R
0.
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
25
20
12
1
0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
EIAJ:SC–71
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
*1
h
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
*3
R
on
Conditions
V
CB
= 25V, I
C
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
typ
1.25±0.05
Low collector to emitter saturation voltage V
CE(sat)
.
Low ON resistance R
on
.
High foward current transfer ratio h
FE
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0±0.1
0.85
0.55±0.1
0.45±0.05
max
100
4.1±0.2
4.5±0.1
s
Features
7
Unit
nA
V
V
V
25
20
12
200
60
0.13
0.4
1.2
200
10
1.0
*2
800
V
V
MHz
pF
Ω
Pulse measurement
FE1
Rank classification
R
200 ~ 350
S
300 ~ 500
T
400 ~ 800
Measurement circuit
1kΩ
Rank
h
FE1
I
B
=1mA
f=1kHz
V=0.3V
V
B
V
V
V
A
R
on
=
V
B
!1000(Ω)
V
A
–V
B
1
Transistor
P
C
— Ta
1000
1.2
I
B
=4.0mA
800
1.0
Ta=25˚C
3.5mA
3.0mA
0.8
2.5mA
2.0mA
0.6
1.5mA
0.4
1.0mA
0.5mA
0.2
2SD1330
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=75˚C
25˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=25
Collector power dissipation P
C
(mW)
600
400
200
0
0
20
40
60
80 100 120 140 160
Collector current I
C
(A)
0
0
1
2
3
4
5
6
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
1200
V
CE
=2V
400
f
T
— I
E
V
CB
=10V
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
1000
Transition frequency f
T
(MHz)
0.3
1
3
10
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
Forward current transfer ratio h
FE
350
300
250
200
150
100
50
800
Ta=75˚C
600
25˚C
–25˚C
400
200
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(A)
C
ob
— V
CB
24
R
on
— I
B
I
E
=0
Ta=25˚C
f=1MHz
1000
300
R
on
measuring circuit
I
B
=1mA
Collector output capacitance C
ob
(pF)
20
ON resistance R
on
(
Ω
)
100
30
10
3
1
0.3
V
B
V
V
A
16
f=1kHz
V=0.3V
12
8
4
0
1
3
10
30
100
0.1
0.01 0.03
0.1
0.3
1
3
10
Collector to base voltage V
CB
(V)
Base current I
B
(mA)
2
RF/Wirelessly
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