Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
TO-251 and TO-252
TO-220
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 48V,I
D
= 12A,
R
L
= 4Ω,
I
g(REF)
= 0.24mA
(Figure 13)
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
V
DS
= Rated BV
DSS
, V
GS
= 0V
T
C
= 125
o
C, V
DS
= 0.8 x Rated BV
DSS
V
GS
=
±20V
I
D
= 12A, V
GS
= 10V (Figure 9) (Note 2)
V
DD
= 30V, I
D
= 12A
R
L
= 2.5Ω, V
GS
= +10V
R
G
= 10Ω
(Figure 13)
MIN
60
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
7
21
16
10
-
19
10
0.6
300
100
30
-
-
-
MAX
-
4
1
25
100
0.150
40
-
-
-
-
40
23
12
0.8
-
-
-
2.8
100
62.5
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
SYMBOL
V
SD
t
rr
I
SD
= 12A
I
SD
= 12A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
1.5
100
UNITS
V
ns
4-436
RFD3055, RFD3055SM, RFP3055
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
Unless Otherwise Specified
14
12
I
D
, DRAIN CURRENT (A)
10
8
6
4
2
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Z
θJC,
NORMALIZED TRANSIENT
1
THERMAL IMPEDANCE
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
0
10
1
P
DM
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
50
I
DM
, PEAK CURRENT CAPABILITY (A)
200
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
175
–
T C
-
I
=
I 25
*
---------------------
150
10
100µs
100
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
DC
V
GS
= 20V
1
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
t, PULSE WIDTH (ms)
10
3
10
4
0.1
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
4-437
RFD3055, RFD3055SM, RFP3055
Typical Performance Curves
50
I
AS
, AVALANCHE CURRENT (A)
Unless Otherwise Specified
(Continued)
24
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
STARTING T
J
= 25
o
C
18
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 8V
V
GS
= 7V
10
STARTING T
J
= 150
o
C
12
V
GS
= 6V
6
V
GS
= 5V
V
GS
= 4.5V
0
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.01
0.1
t
AV,
TIME IN AVALANCHE (ms)
1
1
0.001
0
1.5
3.0
4.5
6.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
7.5
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
24
I
D
, ON STATE DRAIN CURRENT (A)
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
V
DS
= 15V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
-55
o
C
25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 12A
2.0
18
175
o
C
12
1.5
1.0
6
0.5
0
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
200
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
NORMALIZED GATE THRESHOLD VOLTAGE
2.0
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
I
D
= 250µA
1.5
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
160
120
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0
-80
-40
0
80
120
160
40
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
4-438
RFD3055, RFD3055SM, RFP3055
Typical Performance Curves
600
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
400
C
ISS
Unless Otherwise Specified
(Continued)
60
V
DD
= BV
DSS
45
V
DD
= BV
DSS
7.5
10
V
GS,
GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
30
0.75 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.25 BV
DSS
R
L
= 5Ω
I
G(REF)
= 0.24mA
V
GS
= 10V
0
5.0
200
C
OSS
C
RSS
15
2.5
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
0
20
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
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