2SD1347 datasheet, PDF - EEWORLD Datasheet

2SD1347: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-226, MP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size98KB，3 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SD1347 Overview

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-226, MP, 3 PIN

Parameter Name	Attribute value
Objectid	1481158096
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-226
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.5 V

	2SD1347	2SB985
Description	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-226, MP, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-226, MP, 3 PIN
Objectid	1481158096	1481157997
Parts packaging code	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	3 A	3 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JEDEC-95 code	TO-226	TO-226
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	PNP
Maximum power dissipation(Abs)	1 W	1 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz
VCEsat-Max	0.5 V	0.7 V

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