2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
•
High breakdown voltage
V
CEO
= 300 V
•
Small Cob
Cob = 1.5 pF Typ.
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC4702
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
300
300
5
50
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Collector to emitter saturation
voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Note: Marking is “XV–”.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
h
FE
f
T
Cob
Min
300
300
5
—
—
60
—
—
Typ
—
—
—
—
—
—
80
1.5
Max
—
—
—
0.1
0.5
150
—
—
MHz
pF
Unit
V
V
V
µA
V
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 250 V, I
E
= 0
I
C
= 30 mA, I
B
= 3 mA
V
CE
= 6 V, I
C
= 2 mA
V
CE
= 6 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2
2SC4702
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
150
Collector Current I
C
(mA)
Typical Output Characteristics
10
100
80
Pulse Test
60
50
6
40
4
30
20
I
B
= 10
µA
0
50
100
Ambient Temperature Ta (°C)
150
0
20
40
60
80
100
Collector to Emitter Voltage V
CE
(V)
8
100
50
2
Typical Transfer Characteristics
100
Ta = 75°C
DC Current Transfer Ratio h
FE
Collector Current I
C
(mA)
10
25
–25
1,000
DC Current Transfer Ratio vs.
Collector Current
Ta = 75°C
100
25
–25
1.0
V
CE
= 6 V
Pulse Test
0.1
10
V
CE
= 6 V
Pulse Test
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
1.0
10
Collector Current I
C
(mA)
100
3
2SC4702
Collector to Emitter Saturation Voltage vs.
Collector Current
10
I
C
/I
B
= 10
Pulse Test
1.0
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
1,000
V
CE
= 6 V
Collector to Emitter Saturation Voltage
V
CE (sat)
(V)
Ta = 75°C
25
–25
100
0.1
10
0.01
0.1
1.0
10
Collector Current I
C
(mA)
100
1
0.1
1.0
10
Collector Current I
C
(mA)
100
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
100
f = 1 MHz
I
E
= 0
10
1.0
0.1
0.1
1.0
10
100
Collector to Base Voltage V
CB
(V)
4
Unit: mm
0.65
0.10
3 – 0.4
+ 0.05
–
0.16
– 0.06
+ 0.10
1.5
±
0.15
+ 0.2
– 0.6
0 – 0.1
0.95
0.95
1.9
±
0.2
2.95
±
0.2
0.3
0.65
1.1
– 0.1
+ 0.2
2.8
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
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